All Transistors. MJE15033G Datasheet

 

MJE15033G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE15033G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO220

 MJE15033G Transistor Equivalent Substitute - Cross-Reference Search

   

MJE15033G Datasheet (PDF)

 ..1. Size:166K  onsemi
mje15033g.pdf

MJE15033G MJE15033G

MJE15032 (NPN),MJE15033 (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 AmpereshFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 250 Vd

 6.1. Size:75K  onsemi
mje15032 mje15033.pdf

MJE15033G MJE15033G

MJE15032 (NPN),MJE15033 (PNP)Preferred DevicesComplementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 Amperes8.0 AMPEREShFE = 70 (Min) @ IC = 0.5 AdcPOWER TRANSISTORS= 10 (Min) @ IC = 2.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

 6.2. Size:611K  jilin sino
mje15032 mje15033.pdf

MJE15033G MJE15033G

Complementary NPN-PNP Power Bipolar Transistor RMJE15032(NPN) MJE15033(PNP) APPLICATIONS High frequency drivers in audio amplifiers FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEO NPN-PNP Complementary NPN-PNP

 6.3. Size:172K  cn sptech
mje15033.pdf

MJE15033G MJE15033G

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15033DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = -0.5 AFE C: h = 10 (Min) @I = -2.0 AFE CComplement to Type MJE15032APPLICATIONSDesigned for use as highfrequency drivers in audioamplifiers.ABSOLUTE MAXIMUM RATINGS (Ta=25)

 6.4. Size:213K  inchange semiconductor
mje15033.pdf

MJE15033G MJE15033G

isc Silicon PNP Power Transistor MJE15033DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = -0.5 AFE C: h = 10 (Min) @I = -2.0 AFE CComplement to Type MJE15032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as highfrequency drivers in a

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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