MJE15033G Datasheet. Specs and Replacement

Type Designator: MJE15033G  πŸ“„πŸ“„ 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 Β°C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO220

 MJE15033G Substitution

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MJE15033G datasheet

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MJE15033G

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd... See More ⇒

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MJE15033G

MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -... See More ⇒

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MJE15033G

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MJE15033G

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15033 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = -0.5 A FE C h = 10 (Min) @I = -2.0 A FE C Complement to Type MJE15032 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 )... See More ⇒

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Detailed specifications: MJE13009Z9, MJE13011, MJE1320-ISC, MJE15028G, MJE15029G, MJE15030G, MJE15031G, MJE15032G, B772, MJE15034G, MJE15035G, MJE16014, MJE170G, MJE171G, MJE172G, MJE18004G, MJE18008G

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