MJE15033G datasheet, аналоги, основные параметры

Наименование производителя: MJE15033G  📄📄 

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 50 W

Макcимально допустимое напряжение коллектор-база (Ucb): 250 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 30 MHz

Статический коэффициент передачи тока (hFE): 50

Корпус транзистора: TO220

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MJE15033G даташит

 ..1. Size:166K  onsemi
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MJE15033G

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd

 6.1. Size:75K  onsemi
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MJE15033G

MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

 6.2. Size:611K  jilin sino
 mje15032 mje15033.pdf pdf_icon

MJE15033G

 6.3. Size:172K  cn sptech
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MJE15033G

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15033 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = -0.5 A FE C h = 10 (Min) @I = -2.0 A FE C Complement to Type MJE15032 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 )

ПОКАЗАТЬ ЕЩЁ

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