Биполярный транзистор MJE15033G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE15033G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 30 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO220
Аналоги (замена) для MJE15033G
MJE15033G Datasheet (PDF)
mje15033g.pdf
MJE15032 (NPN),MJE15033 (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 AmpereshFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 250 Vd
mje15032 mje15033.pdf
MJE15032 (NPN),MJE15033 (PNP)Preferred DevicesComplementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 Amperes8.0 AMPEREShFE = 70 (Min) @ IC = 0.5 AdcPOWER TRANSISTORS= 10 (Min) @ IC = 2.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -
mje15032 mje15033.pdf
Complementary NPN-PNP Power Bipolar Transistor RMJE15032(NPN) MJE15033(PNP) APPLICATIONS High frequency drivers in audio amplifiers FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEO NPN-PNP Complementary NPN-PNP
mje15033.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15033DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = -0.5 AFE C: h = 10 (Min) @I = -2.0 AFE CComplement to Type MJE15032APPLICATIONSDesigned for use as highfrequency drivers in audioamplifiers.ABSOLUTE MAXIMUM RATINGS (Ta=25)
mje15033.pdf
isc Silicon PNP Power Transistor MJE15033DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = -0.5 AFE C: h = 10 (Min) @I = -2.0 AFE CComplement to Type MJE15032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as highfrequency drivers in a
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
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