MJE180G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE180G 📄📄
Código: JE180
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hFE): 14
Encapsulados: TO126
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MJE180G datasheet
..1. Size:124K onsemi
mje180g.pdf 
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60
..2. Size:119K onsemi
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mje1802d.pdf
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mje18008.pdf
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mje18002.pdf
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8.9. Size:82K onsemi
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8.10. Size:341K onsemi
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mje18006-d.pdf
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mje18004d2.pdf
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8.14. Size:340K onsemi
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mje18002.pdf
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BA
8.20. Size:94K jmnic
mje18008.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
8.21. Size:95K jmnic
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8.22. Size:216K inchange semiconductor
mje18008.pdf
isc Silicon NPN Power Transistor MJE18008 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
8.23. Size:216K inchange semiconductor
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isc Silicon NPN Power Transistor MJE18006 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
8.24. Size:216K inchange semiconductor
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isc Silicon NPN Power Transistor MJE18004 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
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isc Silicon NPN Power Transistor MJE18002 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
8.26. Size:214K inchange semiconductor
mje180.pdf
isc Silicon NPN Power Transistor MJE180 DESCRIPTION Collector Emitter Sustaining Voltage V = 40 V CEO(SUS) DC Current Gain h = 30(Min) @ I = 0.5 A FE C = 12(Min) @ I = 1.5 A C Complement to the PNP MJE170 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low power audio amplifier Low current high speed switchin
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