MJE180G Datasheet. Specs and Replacement

Type Designator: MJE180G  📄📄 

SMD Transistor Code: JE180

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 14

Noise Figure, dB: -

Package: TO126

 MJE180G Substitution

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MJE180G datasheet

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MJE180G

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60... See More ⇒

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MJE180G

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 - ... See More ⇒

 8.1. Size:152K  motorola

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MJE180G

Order this document MOTOROLA by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES High Speed, High Gain Bipolar 1000 VOLTS NPN Power Transistor with 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of a... See More ⇒

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Order this document MOTOROLA by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 Designer's Data Sheet MJF18009 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS The MJE/MJF18009 has an application specific state of the art die designed for 10 AMPERES use in 220 V line operated Switchmode Power supplies and electronic ballast ( light 1000 VOLTS balla... See More ⇒

Detailed specifications: MJE15034G, MJE15035G, MJE16014, MJE170G, MJE171G, MJE172G, MJE18004G, MJE18008G, 2SD313, MJE181G, MJE182G, MJE200G, MJE210G, MJE210T, MJE243G, MJE253G, MJE270G

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