Справочник транзисторов. MJE180G

 

Биполярный транзистор MJE180G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJE180G
   Маркировка: JE180
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 12.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 30 pf
   Статический коэффициент передачи тока (hfe): 14
   Корпус транзистора: TO126
     - подбор биполярного транзистора по параметрам

 

 

MJE180G Datasheet (PDF)

 ..1. Size:124K  onsemi
mje180g.pdf pdf_icon

MJE180G
MJE180G

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60

 ..2. Size:119K  onsemi
mje170g mje171g mje172g mje180g mje181g mje182g.pdf pdf_icon

MJE180G
MJE180G

MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -

 8.1. Size:152K  motorola
mje1802d.pdf pdf_icon

MJE180G
MJE180G

Order this documentMOTOROLAby MJE18002D2/DSEMICONDUCTOR TECHNICAL DATAMJE18002D2Advance InformationPOWER TRANSISTORS2 AMPERESHigh Speed, High Gain Bipolar1000 VOLTSNPN Power Transistor with50 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe MJE18002D2 use a newly developed technology, so called H2BIP*, to designthe state of a

 8.2. Size:433K  motorola
mje18009.pdf pdf_icon

MJE180G
MJE180G

Order this documentMOTOROLAby MJE18009/DSEMICONDUCTOR TECHNICAL DATAMJE18009Designer's Data SheetMJF18009SWITCHMODE NPN SiliconPlanar Power TransistorPOWER TRANSISTORSThe MJE/MJF18009 has an application specific stateoftheart die designed for10 AMPERESuse in 220 V lineoperated Switchmode Power supplies and electronic ballast (light1000 VOLTSballa

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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