MJE180G datasheet, аналоги, основные параметры
Наименование производителя: MJE180G 📄📄
Маркировка: JE180
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 12.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 30 pf
Статический коэффициент передачи тока (hFE): 14
Корпус транзистора: TO126
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MJE180G даташит
..1. Size:124K onsemi
mje180g.pdf 
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60
..2. Size:119K onsemi
mje170g mje171g mje172g mje180g mje181g mje182g.pdf 
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -
8.1. Size:152K motorola
mje1802d.pdf 
Order this document MOTOROLA by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES High Speed, High Gain Bipolar 1000 VOLTS NPN Power Transistor with 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of a
8.2. Size:433K motorola
mje18009.pdf 
Order this document MOTOROLA by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 Designer's Data Sheet MJF18009 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS The MJE/MJF18009 has an application specific state of the art die designed for 10 AMPERES use in 220 V line operated Switchmode Power supplies and electronic ballast ( light 1000 VOLTS balla
8.3. Size:421K motorola
mje18008.pdf 
Order this document MOTOROLA by MJE18008/D SEMICONDUCTOR TECHNICAL DATA * MJE18008 Designer's Data Sheet * MJF18008 SWITCHMODE *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES The MJE/MJF18008 have an applications specific state of the art die designed 1000 VOLTS for use in 220 V line oper
8.4. Size:415K motorola
mje18006.pdf 
Order this document MOTOROLA by MJE18006/D SEMICONDUCTOR TECHNICAL DATA * MJE18006 Designer's Data Sheet * MJF18006 SWITCHMODE *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES The MJE/MJF18006 have an applications specific state of the art die designed 1000 VOLTS for use in 220 V line oper
8.5. Size:422K motorola
mje18004.pdf 
Order this document MOTOROLA by MJE18004/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet * MJE18004 SWITCHMODE * MJF18004 NPN Bipolar Power Transistor *Motorola Preferred Device For Switching Power Supply Applications POWER TRANSISTOR The MJE/MJF18004 have an applications specific state of the art die designed 5.0 AMPERES for use in 220 V line operated Switchmod
8.6. Size:254K motorola
mje18002.pdf 
Order this document MOTOROLA by MJE18002/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MJE18002* SWITCHMODE MJF18002* NPN Bipolar Power Transistor *Motorola Preferred Device For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state of the art die designed POWER TRANSISTOR for use in 220 V line operated Switchmode Power supplies a
8.7. Size:466K motorola
mje1804d.pdf 
Order this document MOTOROLA by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES High Speed, High Gain Bipolar 1000 VOLTS NPN Power Transistor with 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state of art High Speed High gain BIPolar transistor (H2BIP). Hi
8.8. Size:48K fairchild semi
mje180 mje181 mje182.pdf 
MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE180 60 V MJE181 80 V MJE182 100 V VCEO Collector-Emitter Voltage MJE180 40 V MJE181 60 V
8.9. Size:82K onsemi
mje170 mje171 mje172 mje180 mje181 mje182.pdf 
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M
8.10. Size:341K onsemi
mje18008.pdf 
DATA SHEET www.onsemi.com Switch-mode NPN Bipolar POWER TRANSISTOR Power Transistor 8.0 AMPERES 1000 VOLTS For Switching Power Supply Applications 45 and 125 WATTS COLLECTOR MJE18008 2,4 The MJE18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power supplies 1 and electronic light ballasts. BASE Features 3 EMITTER
8.11. Size:202K onsemi
mje18006-d.pdf 
MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state-of-the-art die http //onsemi.com designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts. POWER TRANSISTOR Features 6.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements 1000 VOLTS - 100
8.12. Size:233K onsemi
mje18004d2.pdf 
MJE18004D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation http //onsemi.com Network POWER TRANSISTORS The MJE18004D2 is state-of-art High Speed High gain BIPolar 5 AMPERES, transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread ( 150 ns on storage time) make it ideally suitable
8.14. Size:340K onsemi
mje18004 mjf18004.pdf 
MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 5.0 AMPERES Hi
8.15. Size:166K onsemi
mje180 mje181 mje182.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.16. Size:155K onsemi
mje18002.pdf 
MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state-of-the-art die http //onsemi.com designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. POWER TRANSISTOR Features 2.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements 100 VOLTS - 50 W
8.17. Size:145K onsemi
mje18008g.pdf 
MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi
8.18. Size:139K onsemi
mje18008 mjf18008.pdf 
MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi
8.19. Size:551K cdil
mje170-2 mje180-2.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BA
8.20. Size:94K jmnic
mje18008.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
8.21. Size:95K jmnic
mje18006.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
8.22. Size:216K inchange semiconductor
mje18008.pdf 
isc Silicon NPN Power Transistor MJE18008 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
8.23. Size:216K inchange semiconductor
mje18006.pdf 
isc Silicon NPN Power Transistor MJE18006 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
8.24. Size:216K inchange semiconductor
mje18004.pdf 
isc Silicon NPN Power Transistor MJE18004 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
8.25. Size:216K inchange semiconductor
mje18002.pdf 
isc Silicon NPN Power Transistor MJE18002 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
8.26. Size:214K inchange semiconductor
mje180.pdf 
isc Silicon NPN Power Transistor MJE180 DESCRIPTION Collector Emitter Sustaining Voltage V = 40 V CEO(SUS) DC Current Gain h = 30(Min) @ I = 0.5 A FE C = 12(Min) @ I = 1.5 A C Complement to the PNP MJE170 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low power audio amplifier Low current high speed switchin
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