MJE181G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE181G
Código: JE181
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12.5 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar MJE181G
MJE181G Datasheet (PDF)
mje170g mje171g mje172g mje180g mje181g mje182g.pdf
MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -
mje181g.pdf
MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60
mje180 mje181 mje182.pdf
MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : MJE180 60 V : MJE181 80 V : MJE182 100 V VCEO Collector-Emitter Voltage : MJE180 40 V : MJE181 60 V
mje170 mje171 mje172 mje180 mje181 mje182.pdf
MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M
mje180 mje181 mje182.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mje181.pdf
isc Silicon NPN Power Transistor MJE181DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 60VCEO(SUS)DC Current Gain: h = 30(Min) @ I = 0.5 AFE C= 12(Min) @ I = 1.5 ACComplement to the PNP MJE171Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifierLow current high speed switching
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
