All Transistors. MJE181G Datasheet

 

MJE181G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE181G
   SMD Transistor Code: JE181
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO126

 MJE181G Transistor Equivalent Substitute - Cross-Reference Search

   

MJE181G Datasheet (PDF)

 ..1. Size:119K  onsemi
mje170g mje171g mje172g mje180g mje181g mje182g.pdf

MJE181G
MJE181G

MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -

 ..2. Size:124K  onsemi
mje181g.pdf

MJE181G
MJE181G

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60

 8.1. Size:48K  fairchild semi
mje180 mje181 mje182.pdf

MJE181G
MJE181G

MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : MJE180 60 V : MJE181 80 V : MJE182 100 V VCEO Collector-Emitter Voltage : MJE180 40 V : MJE181 60 V

 8.2. Size:82K  onsemi
mje170 mje171 mje172 mje180 mje181 mje182.pdf

MJE181G
MJE181G

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M

 8.3. Size:166K  onsemi
mje180 mje181 mje182.pdf

MJE181G
MJE181G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:214K  inchange semiconductor
mje181.pdf

MJE181G
MJE181G

isc Silicon NPN Power Transistor MJE181DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 60VCEO(SUS)DC Current Gain: h = 30(Min) @ I = 0.5 AFE C= 12(Min) @ I = 1.5 ACComplement to the PNP MJE171Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifierLow current high speed switching

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top