Биполярный транзистор MJE181G Даташит. Аналоги
Наименование производителя: MJE181G
Маркировка: JE181
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 12.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора: TO126
Аналог (замена) для MJE181G
MJE181G Datasheet (PDF)
mje170g mje171g mje172g mje180g mje181g mje182g.pdf

MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -
mje181g.pdf

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60
mje180 mje181 mje182.pdf

MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : MJE180 60 V : MJE181 80 V : MJE182 100 V VCEO Collector-Emitter Voltage : MJE180 40 V : MJE181 60 V
mje170 mje171 mje172 mje180 mje181 mje182.pdf

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M
Другие транзисторы... MJE15035G , MJE16014 , MJE170G , MJE171G , MJE172G , MJE18004G , MJE18008G , MJE180G , TIP42 , MJE182G , MJE200G , MJE210G , MJE210T , MJE243G , MJE253G , MJE270G , MJE271G .
History: MJE16004
History: MJE16004



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