Биполярный транзистор MJE181G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE181G
Маркировка: JE181
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 12.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 3
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 50
MHz
Ёмкость коллекторного перехода (Cc): 40
pf
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора:
TO126
Аналоги (замена) для MJE181G
MJE181G
Datasheet (PDF)
..1. Size:119K onsemi
mje170g mje171g mje172g mje180g mje181g mje182g.pdf MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -
..2. Size:124K onsemi
mje181g.pdf MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60
8.1. Size:48K fairchild semi
mje180 mje181 mje182.pdf MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : MJE180 60 V : MJE181 80 V : MJE182 100 V VCEO Collector-Emitter Voltage : MJE180 40 V : MJE181 60 V
8.2. Size:82K onsemi
mje170 mje171 mje172 mje180 mje181 mje182.pdf MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M
8.3. Size:166K onsemi
mje180 mje181 mje182.pdf Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.4. Size:214K inchange semiconductor
mje181.pdf isc Silicon NPN Power Transistor MJE181DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 60VCEO(SUS)DC Current Gain: h = 30(Min) @ I = 0.5 AFE C= 12(Min) @ I = 1.5 ACComplement to the PNP MJE171Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifierLow current high speed switching
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