MJE181G datasheet, аналоги, основные параметры

Наименование производителя: MJE181G  📄📄 

Маркировка: JE181

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 12.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 50 MHz

Ёмкость коллекторного перехода (Cc): 40 pf

Статический коэффициент передачи тока (hFE): 12

Корпус транзистора: TO126

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MJE181G даташит

 ..1. Size:119K  onsemi
 mje170g mje171g mje172g mje180g mje181g mje182g.pdf pdf_icon

MJE181G

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -

 ..2. Size:124K  onsemi
 mje181g.pdf pdf_icon

MJE181G

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60

 8.1. Size:48K  fairchild semi
 mje180 mje181 mje182.pdf pdf_icon

MJE181G

MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE180 60 V MJE181 80 V MJE182 100 V VCEO Collector-Emitter Voltage MJE180 40 V MJE181 60 V

 8.2. Size:82K  onsemi
 mje170 mje171 mje172 mje180 mje181 mje182.pdf pdf_icon

MJE181G

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE15035G, MJE16014, MJE170G, MJE171G, MJE172G, MJE18004G, MJE18008G, MJE180G, 2SD2499, MJE182G, MJE200G, MJE210G, MJE210T, MJE243G, MJE253G, MJE270G, MJE271G