MJE243G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE243G  📄📄 

Código: JE243

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO126

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MJE243G datasheet

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MJE243G

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

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MJE243G

 8.1. Size:235K  motorola
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MJE243G

Order this document MOTOROLA by MJE243/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE243 Plastic Transistors PNP . . . designed for low power audio amplifier and low current, high speed switching * MJE253 applications. High Collector Emitter Sustaining Voltage *Motorola Preferred Device VCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC

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MJE243G

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

Otros transistores... MJE18004G, MJE18008G, MJE180G, MJE181G, MJE182G, MJE200G, MJE210G, MJE210T, TIP42, MJE253G, MJE270G, MJE271G, MJE2955A, MJE2955TG, MJE3055A, MJE3055TG, MJE340G