Справочник транзисторов. MJE243G

 

Биполярный транзистор MJE243G Даташит. Аналоги


   Наименование производителя: MJE243G
   Маркировка: JE243
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 40 MHz
   Ёмкость коллекторного перехода (Cc): 50 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO126
 

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MJE243G Datasheet (PDF)

 ..1. Size:183K  onsemi
mje243g.pdfpdf_icon

MJE243G

MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =

 ..2. Size:157K  onsemi
mje243g mje253g.pdfpdf_icon

MJE243G

MJE243G (NPN),MJE253G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining VoltagePOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON Low Collector-Emitter Saturation Voltage

 8.1. Size:235K  motorola
mje243re.pdfpdf_icon

MJE243G

Order this documentMOTOROLAby MJE243/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE243Plastic TransistorsPNP. . . designed for low power audio amplifier and lowcurrent, highspeed switching*MJE253applications. High CollectorEmitter Sustaining Voltage *Motorola Preferred DeviceVCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC

 8.2. Size:187K  onsemi
mje243 mje253.pdfpdf_icon

MJE243G

MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =

Другие транзисторы... MJE18004G , MJE18008G , MJE180G , MJE181G , MJE182G , MJE200G , MJE210G , MJE210T , TIP127 , MJE253G , MJE270G , MJE271G , MJE2955A , MJE2955TG , MJE3055A , MJE3055TG , MJE340G .

History: TSC128DCZ | 2SA742H | NA41WH | TIP116G | AM82731-006 | CHEMG4GP | NA32ZG

 

 
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