MJE243G Datasheet. Specs and Replacement
Type Designator: MJE243G 📄📄
SMD Transistor Code: JE243
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
MJE243G Substitution
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MJE243G datasheet
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒
Order this document MOTOROLA by MJE243/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE243 Plastic Transistors PNP . . . designed for low power audio amplifier and low current, high speed switching * MJE253 applications. High Collector Emitter Sustaining Voltage *Motorola Preferred Device VCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC... See More ⇒
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒
Detailed specifications: MJE18004G, MJE18008G, MJE180G, MJE181G, MJE182G, MJE200G, MJE210G, MJE210T, TIP42, MJE253G, MJE270G, MJE271G, MJE2955A, MJE2955TG, MJE3055A, MJE3055TG, MJE340G
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History: NSM80100MT1G | MJE13007V7 | H1068 | D12E126
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