MJE5730G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE5730G  📄📄 

Código: MJE5730

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220AB

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MJE5730G datasheet

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MJE5730G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T

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MJE5730G

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 mje5730 mje5731 mje5731a.pdf pdf_icon

MJE5730G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch-mode power supply drivers and other switching applications. www.onsemi.com Features 1.0 AMPERE Popular TO-220 Plastic Package POWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 Series PCP SILICON These Devices ar

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MJE5730G

isc Silicon PNP Power Transistor MJE5730 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -300V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other sw

MOSTRAR MÁS

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