MJE5730G Datasheet. Specs and Replacement
Type Designator: MJE5730G 📄📄
SMD Transistor Code: MJE5730
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220AB
MJE5730G Substitution
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MJE5730G datasheet
MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T... See More ⇒
MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch-mode power supply drivers and other switching applications. www.onsemi.com Features 1.0 AMPERE Popular TO-220 Plastic Package POWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 Series PCP SILICON These Devices ar... See More ⇒
isc Silicon PNP Power Transistor MJE5730 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -300V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other sw... See More ⇒
Detailed specifications: MJE2955TG, MJE3055A, MJE3055TG, MJE340G, MJE3439G, MJE344G, MJE371G, MJE4343G, NJW0281G, MJE5731AG, MJE5731G, MJE5742G, MJE5850G, MJE5851G, MJE5852G, MJE6040T, MJE6041T
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History: 2SC3889A | MJE3055A | MJE5731AG
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