Справочник транзисторов. MJE5730G

 

Биполярный транзистор MJE5730G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJE5730G
   Маркировка: MJE5730
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO220AB

 Аналоги (замена) для MJE5730G

 

 

MJE5730G Datasheet (PDF)

 ..1. Size:162K  onsemi
mje5730g.pdf

MJE5730G
MJE5730G

MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T

 7.1. Size:190K  motorola
mje5730r.pdf

MJE5730G
MJE5730G

Order this documentMOTOROLAby MJE5730/DSEMICONDUCTOR TECHNICAL DATAMJE5730MJE5731High Voltage PNP Silicon PowerMJE5731ATransistors. . . designed for line operated audio output amplifier, SWITCHMODE power supplydrivers and other switching applications.1.0 AMPEREPOWER TRANSISTORS 300 V to 400 V (Min) VCEO(sus)PNP SILICON 1.0 A Rated Collector Current300

 7.2. Size:238K  onsemi
mje5730 mje5731 mje5731a.pdf

MJE5730G
MJE5730G

MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,switch-mode power supply drivers and other switching applications. www.onsemi.comFeatures1.0 AMPERE Popular TO-220 Plastic PackagePOWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 SeriesPCP SILICON These Devices ar

 7.3. Size:218K  inchange semiconductor
mje5730.pdf

MJE5730G
MJE5730G

isc Silicon PNP Power Transistor MJE5730DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -300V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other sw

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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