MJE5731G Todos los transistores

 

MJE5731G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE5731G
   Código: MJE5731
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 350 V
   Tensión colector-emisor (Vce): 350 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de transistor bipolar MJE5731G

 

MJE5731G Datasheet (PDF)

 ..1. Size:162K  onsemi
mje5731g.pdf pdf_icon

MJE5731G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T

 7.1. Size:238K  onsemi
mje5730 mje5731 mje5731a.pdf pdf_icon

MJE5731G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch-mode power supply drivers and other switching applications. www.onsemi.com Features 1.0 AMPERE Popular TO-220 Plastic Package POWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 Series PCP SILICON These Devices ar

 7.2. Size:162K  onsemi
mje5731ag.pdf pdf_icon

MJE5731G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T

 7.3. Size:218K  inchange semiconductor
mje5731.pdf pdf_icon

MJE5731G

isc Silicon PNP Power Transistor MJE5731 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other sw

Otros transistores... MJE3055TG , MJE340G , MJE3439G , MJE344G , MJE371G , MJE4343G , MJE5730G , MJE5731AG , 2SD669A , MJE5742G , MJE5850G , MJE5851G , MJE5852G , MJE6040T , MJE6041T , MJE6042T , MJE6043T .

History: 2N5032 | NA01EI

 

 
Back to Top

 


 
.