MJE5731G - аналоги и даташиты биполярного транзистора

 

MJE5731G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: MJE5731G
   Маркировка: MJE5731
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 350 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 350 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO220AB

 Аналоги (замена) для MJE5731G

 

MJE5731G Datasheet (PDF)

 ..1. Size:162K  onsemi
mje5731g.pdfpdf_icon

MJE5731G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T

 7.1. Size:238K  onsemi
mje5730 mje5731 mje5731a.pdfpdf_icon

MJE5731G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch-mode power supply drivers and other switching applications. www.onsemi.com Features 1.0 AMPERE Popular TO-220 Plastic Package POWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 Series PCP SILICON These Devices ar

 7.2. Size:162K  onsemi
mje5731ag.pdfpdf_icon

MJE5731G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T

 7.3. Size:218K  inchange semiconductor
mje5731.pdfpdf_icon

MJE5731G

isc Silicon PNP Power Transistor MJE5731 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other sw

Другие транзисторы... MJE3055TG , MJE340G , MJE3439G , MJE344G , MJE371G , MJE4343G , MJE5730G , MJE5731AG , 2SD669A , MJE5742G , MJE5850G , MJE5851G , MJE5852G , MJE6040T , MJE6041T , MJE6042T , MJE6043T .

 

 
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