MJE5731G Specs and Replacement

Type Designator: MJE5731G

SMD Transistor Code: MJE5731

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220AB

 MJE5731G Substitution

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MJE5731G datasheet

 ..1. Size:162K  onsemi

mje5731g.pdf pdf_icon

MJE5731G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T... See More ⇒

 7.1. Size:238K  onsemi

mje5730 mje5731 mje5731a.pdf pdf_icon

MJE5731G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch-mode power supply drivers and other switching applications. www.onsemi.com Features 1.0 AMPERE Popular TO-220 Plastic Package POWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 Series PCP SILICON These Devices ar... See More ⇒

 7.2. Size:162K  onsemi

mje5731ag.pdf pdf_icon

MJE5731G

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching http //onsemi.com applications. 1.0 AMPERE Features POWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus) PCP SILICON 1.0 A Rated Collector Current 300-350-400 VOLTS Popular T... See More ⇒

 7.3. Size:218K  inchange semiconductor

mje5731.pdf pdf_icon

MJE5731G

isc Silicon PNP Power Transistor MJE5731 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) DC current gain - h = 30 150@ I = -0.3A FE C With TO-220 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,switchmode power supply drivers and other sw... See More ⇒

Detailed specifications: MJE3055TG, MJE340G, MJE3439G, MJE344G, MJE371G, MJE4343G, MJE5730G, MJE5731AG, 2SD669A, MJE5742G, MJE5850G, MJE5851G, MJE5852G, MJE6040T, MJE6041T, MJE6042T, MJE6043T

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