MJF127G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJF127G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO220

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MJF127G Datasheet (PDF)

..1. Size:150K onsemi
mjf127g.pdf

MJF122, MJF127Complementary PowerDarlingtonsFor Isolated Package ApplicationsDesigned for general-purpose amplifiers and switchinghttp://onsemi.comapplications, where the mounting surface of the device is required tobe electrically isolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER DARLINGTONS Electrically Similar to the Popular TIP122 and TIP127

8.1. Size:267K motorola
mjf122 mjf127.pdf

Order this documentMOTOROLAby MF122/DSEMICONDUCTOR TECHNICAL DATANPNMJF122Complementary PowerPNPMJF127DarlingtonsFor Isolated Package ApplicationsDesigned for generalpurpose amplifiers and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER DARLINGTONS

9.1. Size:189K inchange semiconductor
mjf122g.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 DESCRIPTION With TO-220F package DARLINGTON High DC current gain Low collector saturation voltage Complement to type MJF127 APPLICATIONS Designed for generalpurpose amplifier and switching applications.PINNING PIN DESCRIPTION1 Base 2 Collector 3 Emitter ABSOLUTE MAXI

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDV64A

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Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D