MJF127G Specs and Replacement
Type Designator: MJF127G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220
MJF127G Transistor Equivalent Substitute - Cross-Reference Search
MJF127G detailed specifications
mjf127g.pdf
MJF122, MJF127 Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Electrically Similar to the Popular TIP122 and TIP127 ... See More ⇒
mjf122g.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 DESCRIPTION With TO-220F package DARLINGTON High DC current gain Low collector saturation voltage Complement to type MJF127 APPLICATIONS Designed for general purpose amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXI... See More ⇒
Detailed specifications: MJE6045T , MJE700G , MJE702G , MJE703G , MJE800G , MJE802G , MJE803G , MJF122G , MJE350 , MJF13009 , MJF15030G , MJF15031G , MJF18004G , MJF18008G , MJF2955G , MJF3055G , MJF31CG .
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