MJF127G
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF127G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 300
pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package:
TO220
MJF127G
Transistor Equivalent Substitute - Cross-Reference Search
MJF127G
Datasheet (PDF)
..1. Size:150K onsemi
mjf127g.pdf
MJF122, MJF127Complementary PowerDarlingtonsFor Isolated Package ApplicationsDesigned for general-purpose amplifiers and switchinghttp://onsemi.comapplications, where the mounting surface of the device is required tobe electrically isolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER DARLINGTONS Electrically Similar to the Popular TIP122 and TIP127
8.1. Size:267K motorola
mjf122 mjf127.pdf
Order this documentMOTOROLAby MF122/DSEMICONDUCTOR TECHNICAL DATANPNMJF122Complementary PowerPNPMJF127DarlingtonsFor Isolated Package ApplicationsDesigned for generalpurpose amplifiers and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER DARLINGTONS
9.1. Size:189K inchange semiconductor
mjf122g.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 DESCRIPTION With TO-220F package DARLINGTON High DC current gain Low collector saturation voltage Complement to type MJF127 APPLICATIONS Designed for generalpurpose amplifier and switching applications.PINNING PIN DESCRIPTION1 Base 2 Collector 3 Emitter ABSOLUTE MAXI
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