MJF13009 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJF13009
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 180 pF
Ganancia de corriente contínua (hfe): 6
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MJF13009
MJF13009 Datasheet (PDF)
mjf13009.pdf

isc Silicon NPN Power Transistor MJF13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p
mjf13005.pdf

isc Silicon NPN Power Transistor MJF13005DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.6(Max.) @ I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p
mjf13007.pdf

isc Silicon NPN Power Transistor MJF13007DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 2.0(Max) @ I = 5.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa
Otros transistores... MJE700G , MJE702G , MJE703G , MJE800G , MJE802G , MJE803G , MJF122G , MJF127G , TIP36C , MJF15030G , MJF15031G , MJF18004G , MJF18008G , MJF2955G , MJF3055G , MJF31CG , MJF32CG .



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