MJF13009 Specs and Replacement

Type Designator: MJF13009

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 180 pF

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

Package: TO220F

 MJF13009 Substitution

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MJF13009 datasheet

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MJF13009

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MJF13009

isc Silicon NPN Power Transistor MJF13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p... See More ⇒

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MJF13009

isc Silicon NPN Power Transistor MJF13005 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.6(Max.) @ I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p... See More ⇒

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MJF13009

isc Silicon NPN Power Transistor MJF13007 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 2.0(Max) @ I = 5.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are pa... See More ⇒

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Detailed specifications: MJE700G, MJE702G, MJE703G, MJE800G, MJE802G, MJE803G, MJF122G, MJF127G, D882P, MJF15030G, MJF15031G, MJF18004G, MJF18008G, MJF2955G, MJF3055G, MJF31CG, MJF32CG

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