MJF13009
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF13009
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 700
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 9
V
Maximum Collector Current |Ic max|: 12
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 4
MHz
Collector Capacitance (Cc): 180
pF
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package:
TO220F
MJF13009
Transistor Equivalent Substitute - Cross-Reference Search
MJF13009
Datasheet (PDF)
..2. Size:215K inchange semiconductor
mjf13009.pdf
isc Silicon NPN Power Transistor MJF13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p
7.1. Size:207K inchange semiconductor
mjf13005.pdf
isc Silicon NPN Power Transistor MJF13005DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.6(Max.) @ I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p
7.2. Size:215K inchange semiconductor
mjf13007.pdf
isc Silicon NPN Power Transistor MJF13007DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 2.0(Max) @ I = 5.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa
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