MJF18008G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJF18008G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 13 MHz
Capacitancia de salida (Cc): 100 pF
Ganancia de corriente contínua (hfe): 14
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MJF18008G
MJF18008G Datasheet (PDF)
mjf18008g.pdf

MJE18008G, MJF18008GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES
mje18008 mjf18008.pdf

MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi
mjf18008.pdf

isc Silicon NPN Power Transistor MJF18008DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL P
mje18004 mjf18004.pdf

MJE18004, MJF18004Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES Hi
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: PDTC144VK
History: PDTC144VK



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