All Transistors. MJF18008G Equivalents Search

MJE18008G, MJF18008G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power http //onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES ... See More ⇒

MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi... See More ⇒

isc Silicon NPN Power Transistor MJF18008 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL P... See More ⇒

MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 5.0 AMPERES Hi... See More ⇒

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Product Specification www.jmnic.com Silicon NPN Power Transistors MJF18006 DESCRIPTION With TO-220F package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI... See More ⇒

isc Silicon NPN Power Transistor MJF18004 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒

isc Silicon NPN Power Transistor MJF18006 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒

isc Silicon NPN Power Transistor MJF18002 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL P... See More ⇒