MJF18008G datasheet, аналоги, основные параметры

Наименование производителя: MJF18008G  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 125 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 13 MHz

Ёмкость коллекторного перехода (Cc): 100 pf

Статический коэффициент передачи тока (hFE): 14

Корпус транзистора: TO220F

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MJF18008G даташит

 ..1. Size:257K  onsemi
 mjf18008g.pdf pdf_icon

MJF18008G

MJE18008G, MJF18008G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power http //onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES

 6.1. Size:139K  onsemi
 mje18008 mjf18008.pdf pdf_icon

MJF18008G

MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi

 6.2. Size:214K  inchange semiconductor
 mjf18008.pdf pdf_icon

MJF18008G

isc Silicon NPN Power Transistor MJF18008 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL P

 7.1. Size:340K  onsemi
 mje18004 mjf18004.pdf pdf_icon

MJF18008G

MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 5.0 AMPERES Hi

ПОКАЗАТЬ ЕЩЁ

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