MJF3055G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJF3055G
Código: F3055
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 90 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 2 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO220F
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MJF3055G datasheet
mjf3055g.pdf
MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. http //onsemi.com Features COMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90
mjf3055 mjf2955.pdf
Order this document MOTOROLA by MJF3055/D SEMICONDUCTOR TECHNICAL DATA NPN MJF3055 Complementary PNP MJF2955 Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T COMPLEMENTARY Collector Emitter Sustaining V
mjf3055 mjf2955.pdf
MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. http //onsemi.com Features COMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90
Otros transistores... MJF122G, MJF127G, MJF13009, MJF15030G, MJF15031G, MJF18004G, MJF18008G, MJF2955G, BD333, MJF31CG, MJF32CG, MJF44H11G, MJF45H11G, MJF47G, MJF6388G, MJF6668, MJF6668G
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