MJF3055G Specs and Replacement
Type Designator: MJF3055G
SMD Transistor Code: F3055
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220F
MJF3055G Transistor Equivalent Substitute - Cross-Reference Search
MJF3055G detailed specifications
mjf3055g.pdf
MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. http //onsemi.com Features COMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90 ... See More ⇒
mjf3055 mjf2955.pdf
Order this document MOTOROLA by MJF3055/D SEMICONDUCTOR TECHNICAL DATA NPN MJF3055 Complementary PNP MJF2955 Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T COMPLEMENTARY Collector Emitter Sustaining V... See More ⇒
mjf3055 mjf2955.pdf
MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. http //onsemi.com Features COMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90 ... See More ⇒
Detailed specifications: MJF122G , MJF127G , MJF13009 , MJF15030G , MJF15031G , MJF18004G , MJF18008G , MJF2955G , BD333 , MJF31CG , MJF32CG , MJF44H11G , MJF45H11G , MJF47G , MJF6388G , MJF6668 , MJF6668G .
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