MJF3055G Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MJF3055G Datasheet. Specs and Replacement

Type Designator: MJF3055G 📄📄

SMD Transistor Code: F3055

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220F

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MJF3055G datasheet

..1. Size:115K onsemi

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MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. http //onsemi.com Features COMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90 ... See More ⇒

7.1. Size:156K motorola

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Order this document MOTOROLA by MJF3055/D SEMICONDUCTOR TECHNICAL DATA NPN MJF3055 Complementary PNP MJF2955 Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T COMPLEMENTARY Collector Emitter Sustaining V... See More ⇒

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