All Transistors. MJF3055G Datasheet

 

MJF3055G Datasheet and Replacement


   Type Designator: MJF3055G
   SMD Transistor Code: F3055
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220F
 

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MJF3055G Datasheet (PDF)

 ..1. Size:115K  onsemi
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MJF3055G

MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90

 7.1. Size:156K  motorola
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MJF3055G

Order this documentMOTOROLAby MJF3055/DSEMICONDUCTOR TECHNICAL DATANPNMJF3055ComplementaryPNPMJF2955Silicon Power Transistors. . . specifically designed for general purpose amplifier and switching applications. Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T COMPLEMENTARY CollectorEmitter Sustaining V

 7.2. Size:183K  onsemi
mjf3055 mjf2955.pdf pdf_icon

MJF3055G

MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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