MJF31CG Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJF31CG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 28 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220F

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MJF31CG datasheet

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 mjf31cg.pdf pdf_icon

MJF31CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

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 mjf31c mjf32c.pdf pdf_icon

MJF31CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

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