MJF31CG Specs and Replacement

Type Designator: MJF31CG

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 28 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220F

 MJF31CG Substitution

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MJF31CG datasheet

 ..1. Size:122K  onsemi

 mjf31cg.pdf pdf_icon

MJF31CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc ... See More ⇒

 8.1. Size:190K  onsemi

 mjf31c mjf32c.pdf pdf_icon

MJF31CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc ... See More ⇒

Detailed specifications: MJF127G, MJF13009, MJF15030G, MJF15031G, MJF18004G, MJF18008G, MJF2955G, MJF3055G, BDT88, MJF32CG, MJF44H11G, MJF45H11G, MJF47G, MJF6388G, MJF6668, MJF6668G, MJH11017G

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