MJF44H11G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJF44H11G  📄📄 

Código: F44H11

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 130 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO220F

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MJF44H11G datasheet

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MJF44H11G

MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http //onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in SILICON POWER TRANSISTORS applications such as switching regulators, converters and power 10 AMPERES amplifiers. 80 VOLTS, 36

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MJF44H11G

MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http //onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in SILICON POWER TRANSISTORS applications such as switching regulators, converters and power 10 AMPERES amplifiers. 80 VOLTS, 36

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MJF44H11G

isc Silicon NPN Power Transistors MJF44H11 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 8A CE(sat) C Fast Switching Speeds Complement to Type MJF45H11 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplification and switching such as output or driver stages in applicat

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