MJF44H11G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJF44H11G
Código: F44H11
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 36 W
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 130 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar MJF44H11G
MJF44H11G Datasheet (PDF)
mjf44h11g.pdf
MJF44H11 (NPN),MJF45H11 (PNP)Preferred DevicesComplementaryPower TransistorsFor Isolated Package Applicationshttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages inSILICON POWER TRANSISTORSapplications such as switching regulators, converters and power10 AMPERESamplifiers.80 VOLTS, 36
mjf44h11 mjf45h11.pdf
MJF44H11 (NPN),MJF45H11 (PNP)Preferred DevicesComplementaryPower TransistorsFor Isolated Package Applicationshttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages inSILICON POWER TRANSISTORSapplications such as switching regulators, converters and power10 AMPERESamplifiers.80 VOLTS, 36
mjf44h11.pdf
isc Silicon NPN Power Transistors MJF44H11DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 8ACE(sat) CFast Switching SpeedsComplement to Type MJF45H11Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitching such as output or driver stages in applicat
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
