MJF44H11G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF44H11G
SMD Transistor Code: F44H11
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220F
MJF44H11G Transistor Equivalent Substitute - Cross-Reference Search
MJF44H11G Datasheet (PDF)
mjf44h11g.pdf
MJF44H11 (NPN),MJF45H11 (PNP)Preferred DevicesComplementaryPower TransistorsFor Isolated Package Applicationshttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages inSILICON POWER TRANSISTORSapplications such as switching regulators, converters and power10 AMPERESamplifiers.80 VOLTS, 36
mjf44h11 mjf45h11.pdf
MJF44H11 (NPN),MJF45H11 (PNP)Preferred DevicesComplementaryPower TransistorsFor Isolated Package Applicationshttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages inSILICON POWER TRANSISTORSapplications such as switching regulators, converters and power10 AMPERESamplifiers.80 VOLTS, 36
mjf44h11.pdf
isc Silicon NPN Power Transistors MJF44H11DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 8ACE(sat) CFast Switching SpeedsComplement to Type MJF45H11Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitching such as output or driver stages in applicat
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
