MJF44H11G Datasheet. Specs and Replacement

Type Designator: MJF44H11G  📄📄 

SMD Transistor Code: F44H11

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 130 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220F

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MJF44H11G datasheet

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MJF44H11G

MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http //onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in SILICON POWER TRANSISTORS applications such as switching regulators, converters and power 10 AMPERES amplifiers. 80 VOLTS, 36 ... See More ⇒

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MJF44H11G

MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http //onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in SILICON POWER TRANSISTORS applications such as switching regulators, converters and power 10 AMPERES amplifiers. 80 VOLTS, 36 ... See More ⇒

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MJF44H11G

isc Silicon NPN Power Transistors MJF44H11 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 8A CE(sat) C Fast Switching Speeds Complement to Type MJF45H11 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplification and switching such as output or driver stages in applicat... See More ⇒

Detailed specifications: MJF15030G, MJF15031G, MJF18004G, MJF18008G, MJF2955G, MJF3055G, MJF31CG, MJF32CG, BC547, MJF45H11G, MJF47G, MJF6388G, MJF6668, MJF6668G, MJH11017G, MJH11019G, MJH11020G

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