MJF47G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJF47G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 28.4 W

Tensión colector-base (Vcb): 350 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220F

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MJF47G datasheet

 ..1. Size:185K  onsemi
 mjf47g.pdf pdf_icon

MJF47G

MJF47G High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power http //onsemi.com supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. NPN SILICON POWER TRANSISTOR Features Electrically Similar to the Po

 9.1. Size:160K  motorola
 mjf47rev.pdf pdf_icon

MJF47G

Order this document MOTOROLA by MJF47/D SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor NPN SILICON Isolated Package Applications POWER TRANSISTOR Designed for line operated audio output amplifiers, switching power supply drivers 1 AMPERE and other switching applications, where the mounting surface of the device is required 250 VOLTS to be electrically isolated from

 9.2. Size:130K  onsemi
 mjf47.pdf pdf_icon

MJF47G

MJF47 High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power http //onsemi.com supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the NPN SILICON heatsink or chassis. POWER TRANSISTOR Features 1 AMPERE Electrically Similar

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