MJF47G
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF47G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 28.4
W
Maximum Collector-Base Voltage |Vcb|: 350
V
Maximum Collector-Emitter Voltage |Vce|: 250
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 10
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO220F
MJF47G
Transistor Equivalent Substitute - Cross-Reference Search
MJF47G
Datasheet (PDF)
..1. Size:185K onsemi
mjf47g.pdf
MJF47GHigh Voltage PowerTransistorIsolated Package ApplicationsDesigned for line operated audio output amplifiers, switching powerhttp://onsemi.comsupply drivers and other switching applications, where the mountingsurface of the device is required to be electrically isolated from theheatsink or chassis.NPN SILICONPOWER TRANSISTORFeatures Electrically Similar to the Po
9.1. Size:160K motorola
mjf47rev.pdf
Order this documentMOTOROLAby MJF47/DSEMICONDUCTOR TECHNICAL DATAMJF47High Voltage Power TransistorNPN SILICONIsolated Package ApplicationsPOWER TRANSISTORDesigned for line operated audio output amplifiers, switching power supply drivers 1 AMPEREand other switching applications, where the mounting surface of the device is required 250 VOLTSto be electrically isolated from
9.2. Size:130K onsemi
mjf47.pdf
MJF47High Voltage PowerTransistorIsolated Package ApplicationsDesigned for line operated audio output amplifiers, switching powerhttp://onsemi.comsupply drivers and other switching applications, where the mountingsurface of the device is required to be electrically isolated from theNPN SILICONheatsink or chassis.POWER TRANSISTORFeatures1 AMPERE Electrically Similar
Datasheet: 2N3200
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