MJF47G Specs and Replacement
Type Designator: MJF47G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 28.4 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220F
MJF47G Substitution
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MJF47G datasheet
MJF47G High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power http //onsemi.com supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. NPN SILICON POWER TRANSISTOR Features Electrically Similar to the Po... See More ⇒
Order this document MOTOROLA by MJF47/D SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor NPN SILICON Isolated Package Applications POWER TRANSISTOR Designed for line operated audio output amplifiers, switching power supply drivers 1 AMPERE and other switching applications, where the mounting surface of the device is required 250 VOLTS to be electrically isolated from ... See More ⇒
MJF47 High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power http //onsemi.com supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the NPN SILICON heatsink or chassis. POWER TRANSISTOR Features 1 AMPERE Electrically Similar ... See More ⇒
Detailed specifications: MJF18004G, MJF18008G, MJF2955G, MJF3055G, MJF31CG, MJF32CG, MJF44H11G, MJF45H11G, TIP41C, MJF6388G, MJF6668, MJF6668G, MJH11017G, MJH11019G, MJH11020G, MJH11021G, MJH11022G
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