MJH11019G Todos los transistores

 

MJH11019G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJH11019G
   Código: MJH11019
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 600 pF
   Ganancia de corriente contínua (hfe): 400
   Paquete / Cubierta: TO218 TO247

 Búsqueda de reemplazo de transistor bipolar MJH11019G

 

Principales características: MJH11019G

 ..1. Size:141K  onsemi
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MJH11019G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 6.1. Size:212K  motorola
 mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf pdf_icon

MJH11019G

Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo

 7.1. Size:141K  onsemi
 mjh11017g.pdf pdf_icon

MJH11019G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 7.2. Size:222K  inchange semiconductor
 mjh11017.pdf pdf_icon

MJH11019G

isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION High DC Current Gain- h = 400(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -150V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.5V(Max)@ I = -10A CE(sat) C = -4.0V(Max)@ I = -15A C Complement to Type MJH11018 Minimum Lot-to-Lot variations for robust device performance

MOSTRAR MÁS

Otros transistores... MJF32CG , MJF44H11G , MJF45H11G , MJF47G , MJF6388G , MJF6668 , MJF6668G , MJH11017G , C945 , MJH11020G , MJH11021G , MJH11022G , MJH16010 , MJH16010A , MJH16012 , MJH16018 , MJH6284G .

 

 
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