MJH11019G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJH11019G
Código: MJH11019
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Capacitancia de salida (Cc): 600 pF
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta: TO218 TO247
Búsqueda de reemplazo de transistor bipolar MJH11019G
MJH11019G Datasheet (PDF)
mjh11019g.pdf
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isc Silicon PNP Darlington Power Transistor MJH11017DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = -10AFE CCollector-Emitter Sustaining Voltage-: V = -150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -10ACE(sat) C= -4.0V(Max)@ I = -15ACComplement to Type MJH11018Minimum Lot-to-Lot variations for robust deviceperformance
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isc Silicon NPN Darlington Power Transistor MJH11018DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = 10AFE CCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 10ACE(sat) C= 4.0V(Max)@ I = 15ACComplement to Type MJH11017Minimum Lot-to-Lot variations for robust deviceperformance and r
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