MJH11019G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJH11019G
Código: MJH11019
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150
W
Tensión colector-base (Vcb): 200
V
Tensión colector-emisor (Vce): 200
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Capacitancia de salida (Cc): 600
pF
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta:
TO218
TO247
Búsqueda de reemplazo de transistor bipolar MJH11019G
MJH11019G
Datasheet (PDF)
..1. Size:141K onsemi
mjh11019g.pdf 
MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (
6.1. Size:212K motorola
mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf
Order this documentMOTOROLAby MJH11017/DSEMICONDUCTOR TECHNICAL DATAMJH10012(See MJ10012)Complementary DarlingtonPNPSilicon Power Transistors*MJH11017. . . designed for use as general purpose amplifiers, low frequency switching andmotor control applications.MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) CollectorEmitter Sustaining Vo
7.1. Size:141K onsemi
mjh11017g.pdf
MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (
7.2. Size:222K inchange semiconductor
mjh11017.pdf
isc Silicon PNP Darlington Power Transistor MJH11017DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = -10AFE CCollector-Emitter Sustaining Voltage-: V = -150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -10ACE(sat) C= -4.0V(Max)@ I = -15ACComplement to Type MJH11018Minimum Lot-to-Lot variations for robust deviceperformance
7.3. Size:224K inchange semiconductor
mjh11018.pdf
isc Silicon NPN Darlington Power Transistor MJH11018DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = 10AFE CCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 10ACE(sat) C= 4.0V(Max)@ I = 15ACComplement to Type MJH11017Minimum Lot-to-Lot variations for robust deviceperformance and r
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