MJH11019G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJH11019G
SMD Transistor Code: MJH11019
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO218 TO247
MJH11019G Transistor Equivalent Substitute - Cross-Reference Search
MJH11019G Datasheet (PDF)
mjh11019g.pdf
MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (
mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf
Order this documentMOTOROLAby MJH11017/DSEMICONDUCTOR TECHNICAL DATAMJH10012(See MJ10012)Complementary DarlingtonPNPSilicon Power Transistors*MJH11017. . . designed for use as general purpose amplifiers, low frequency switching andmotor control applications.MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) CollectorEmitter Sustaining Vo
mjh11017g.pdf
MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (
mjh11017.pdf
isc Silicon PNP Darlington Power Transistor MJH11017DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = -10AFE CCollector-Emitter Sustaining Voltage-: V = -150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -10ACE(sat) C= -4.0V(Max)@ I = -15ACComplement to Type MJH11018Minimum Lot-to-Lot variations for robust deviceperformance
mjh11018.pdf
isc Silicon NPN Darlington Power Transistor MJH11018DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = 10AFE CCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 10ACE(sat) C= 4.0V(Max)@ I = 15ACComplement to Type MJH11017Minimum Lot-to-Lot variations for robust deviceperformance and r
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
