MJL21194G Todos los transistores

 

MJL21194G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJL21194G
   Código: MJL21194
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 500 pF
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO264
 

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MJL21194G datasheet

 ..1. Size:120K  onsemi
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MJL21194G

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea

 6.1. Size:159K  motorola
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MJL21194G

Order this document MOTOROLA by MJL21193/D SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN Silicon Power Transistors * MJL21194 The MJL21193 and MJL21194 utilize Perforated Emitter technology and are *Motorola Preferred Device specifically designed for high power audio output, disk head positioners and linear applications. 16 AMPERE COMPLEMENTARY Total Harmonic Distortion Char

 6.2. Size:116K  onsemi
mjl21193 mjl21194.pdf pdf_icon

MJL21194G

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea

 6.3. Size:1309K  jilin sino
mjl21194 mjl21193.pdf pdf_icon

MJL21194G

Complementary NPN-PNP Power Bipolar Transistor R MJL21194(NPN) MJL21193(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltage V =250V (min) CEO CEO NPN-PNP Complementary NPN-P

Otros transistores... MJH16010 , MJH16010A , MJH16012 , MJH16018 , MJH6284G , MJH6287G , MJL1302AG , MJL21193G , 13007 , MJL21195G , MJL21196G , MJL3281AG , MJL4281AG , MJL4302AG , MJW1302AG , MJW21191 , MJW21192 .

History: 2SA968B | DK53AD | 3DD13005N8D | 13005D | MJE13005VT7 | 9011M

 

 

 


 
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