MJL21194G
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJL21194G
SMD Transistor Code: MJL21194
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200
W
Maximum Collector-Base Voltage |Vcb|: 400
V
Maximum Collector-Emitter Voltage |Vce|: 250
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 16
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 4
MHz
Collector Capacitance (Cc): 500
pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
TO264
MJL21194G
Transistor Equivalent Substitute - Cross-Reference Search
MJL21194G
Datasheet (PDF)
..1. Size:120K onsemi
mjl21194g.pdf
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
6.1. Size:159K motorola
mjl21193 mjl21194.pdf
Order this documentMOTOROLAby MJL21193/DSEMICONDUCTOR TECHNICAL DATAPNPMJL21193*NPNSilicon Power Transistors*MJL21194The MJL21193 and MJL21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications. 16 AMPERECOMPLEMENTARY Total Harmonic Distortion Char
6.2. Size:116K onsemi
mjl21193 mjl21194.pdf
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
6.3. Size:1309K jilin sino
mjl21194 mjl21193.pdf
Complementary NPN-PNP Power Bipolar Transistor R MJL21194(NPN) MJL21193(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEONPN-PNP Complementary NPN-P
6.4. Size:425K cn sptech
mjl21194.pdf
SPTECH Product SpecificationSPTECH NPN Power Transistors MJL21194 DESCRIPTION With TO-3PL packageComplement to type MJL21193Excellent gain linearityAPPLICATIONS Designed for high power audio output,diskhead positioners and linear applicationsPINNINGPIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 E
6.5. Size:216K inchange semiconductor
mjl21194.pdf
isc Silicon NPN Power Transistor MJL21194DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= 250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear app
Datasheet: HA9079
, HA9500
, HA9501
, HA9502
, HA9531
, HA9531A
, HA9532
, HA9532A
, TIP142
, HCT2907A
, HCT2907M
, HDA412
, HDA420
, HDA496
, HEP637
, HEPG0001
, HEPG0002
.