Биполярный транзистор MJL21194G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJL21194G
Маркировка: MJL21194
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 200
W
Макcимально допустимое напряжение коллектор-база (Ucb): 400
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 16
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 4
MHz
Ёмкость коллекторного перехода (Cc): 500
pf
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора:
TO264
Аналоги (замена) для MJL21194G
MJL21194G
Datasheet (PDF)
..1. Size:120K onsemi
mjl21194g.pdf 
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
6.1. Size:159K motorola
mjl21193 mjl21194.pdf 
Order this documentMOTOROLAby MJL21193/DSEMICONDUCTOR TECHNICAL DATAPNPMJL21193*NPNSilicon Power Transistors*MJL21194The MJL21193 and MJL21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications. 16 AMPERECOMPLEMENTARY Total Harmonic Distortion Char
6.2. Size:116K onsemi
mjl21193 mjl21194.pdf 
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea
6.3. Size:1309K jilin sino
mjl21194 mjl21193.pdf 
Complementary NPN-PNP Power Bipolar Transistor R MJL21194(NPN) MJL21193(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEONPN-PNP Complementary NPN-P
6.4. Size:425K cn sptech
mjl21194.pdf 
SPTECH Product SpecificationSPTECH NPN Power Transistors MJL21194 DESCRIPTION With TO-3PL packageComplement to type MJL21193Excellent gain linearityAPPLICATIONS Designed for high power audio output,diskhead positioners and linear applicationsPINNINGPIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 E
6.5. Size:216K inchange semiconductor
mjl21194.pdf 
isc Silicon NPN Power Transistor MJL21194DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= 250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear app
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