3CD4 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

3CD4 Datasheet (PDF)

..1. Size:26K shaanxi
3cd4.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD4PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JCT,

0.1. Size:146K china
3cd42.pdf pdf_icon

3CD42(TIP42) PNP A B C D E F PCM TC=25 100 W ICM 10 A Tjm 150 Tstg -55~150 VCE=10V Rth 1.25 /W IC=3A V(BR)CBO ICB=5mA 30 50 80 120 150 200 V V(BR)CEO ICE=5mA 30 50 80 120 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 1.0 mA

0.2. Size:119K china
3cd4399.pdf pdf_icon

3CD4399 PNP PCM TC=25 200 W ICM 30 A IB 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.5 /W IC=5A V(BR)CBO ICB=2mA 60 V V(BR)CEO ICE=2mA 60 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA IEBO VEB=4V 2.0 mA VBEsa

0.3. Size:125K china
3cd438.pdf pdf_icon

3CD438 PNP PCM 1.25 W ICM 4 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 45 V V(BR)CEO ICE=10mA 45 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=45V 0.1 mA ICEO VCE=45V 0.1 mA IEBO VEB=5.0V 1.0 mA IC=2.0A VCEsat 0.6 V IB=0.2A VCE=5.0V hFE

Otros transistores... 3CD1375 , 3CD150 , 3CD205 , 3CD3 , 3CD32 , 3CD32A , 3CD32B , 3CD32C , TIP42 , 3CD42 , 3CD438 , 3CD4399 , 3CD5 , 3CD6 , 3CD6109 , 3CD6124 , 3CD6125 .