3CD4 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CD4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3CD4 Transistor Equivalent Substitute - Cross-Reference Search
3CD4 Datasheet (PDF)
3cd4.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD4PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JCT,
3cd42.pdf
3CD42(TIP42) PNP A B C D E F PCM TC=25 100 W ICM 10 A Tjm 150 Tstg -55~150 VCE=10V Rth 1.25 /W IC=3A V(BR)CBO ICB=5mA 30 50 80 120 150 200 V V(BR)CEO ICE=5mA 30 50 80 120 150 200 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 1.0 mA
3cd4399.pdf
3CD4399 PNP PCM TC=25 200 W ICM 30 A IB 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.5 /W IC=5A V(BR)CBO ICB=2mA 60 V V(BR)CEO ICE=2mA 60 V V(BR)EBO IEB=2mA 5.0 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA IEBO VEB=4V 2.0 mA VBEsa
3cd438.pdf
3CD438 PNP PCM 1.25 W ICM 4 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 45 V V(BR)CEO ICE=10mA 45 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=45V 0.1 mA ICEO VCE=45V 0.1 mA IEBO VEB=5.0V 1.0 mA IC=2.0A VCEsat 0.6 V IB=0.2A VCE=5.0V hFE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
