3CG1 Todos los transistores

 ..1. Size:133K  china
 3cg1.pdf

3CG1 PNP A B C D E F G PCM TA=25 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.1mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V

 0.1. Size:133K  china
 3cg110.pdf

3CG110 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.

 0.2. Size:112K  china
 3cg1124.pdf

3CG1124 PNP PCM TA=25 500 mW ICM 3 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=10uA 60 V V(BR)CEO ICE=1mA 50 V V(BR)EBO IEB=10uA 6.0 V ICBO VCB=40V 1 A IEBO VEB=4V 1 A VBEsat 1.2 IC=2A V IB=100mA VCEsat 0.7 VCE=2V hFE 100 5

 0.3. Size:125K  china
 3cg130.pdf

3CG130 PNP A B C D E F G PCM 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1

 0.4. Size:132K  china
 3cg112.pdf

3CG112 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0

 0.5. Size:121K  china
 3cg17b.pdf

3CG17B PNP PCM TA=25 150 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.1mA 12 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=6V 0.2 A IC=10mA VCEsat 0.5 V IB=1mA VCE=6V hFE 30 IC=2mA VCE=5V fT IC=5mA 100 MHz fo=3

 0.6. Size:121K  china
 3cg131.pdf

3CG131 PNP A B C D E PCM Tc=75 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 15 30 45 60 75 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A IEBO VE

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 3cg12.pdf

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 3cg114b.pdf

3CG114B PNP PCM TA=25 1.0 W ICM 1.0 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VCE=2V

 0.9. Size:118K  china
 3cg1013.pdf

3CG1013 PNP PCM TA=25 0.9 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A IEBO VEB=5V 0.5 A VBEsat 1.5 IC=500mA V IB=50mA

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 3cg1020.pdf

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 3cg180.pdf

3CG180 PNP A B C D E F G PCM 700 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 120 160 200 240 120 160 200 V V(BR)CEO ICE=0.1mA 100 140 180 220 100 140 180 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 0.5 A ICEO

 0.12. Size:119K  china
 3cg182.pdf

3CG182 PNP A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 120 160 200 240 V V(BR)CEO ICE=0.1mA 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 0.5 A ICEO VCE=30V 1.0 A IEBO VEB=2V 0.5 A

 0.13. Size:132K  china
 3cg111.pdf

3CG111 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.

 0.14. Size:98K  china
 3cg170.pdf

LJ2015-37 3CG170 PNP A B C D E P Ta=25 500 mW CM I 50 mA CM T 175 jm T -55 150 stg V I =0.1mA 80 120 160 200 240 V (BR)CBO CB V I =0.1mA 60 100 140 180 200 V (BR)CEO CE V I =0.1mA 4.0 V (BR)EBO EB I V =3

 0.15. Size:259K  lzg
 3cg1585s.pdf

2SA1585S(3CG1585S) PNP /SILICON PNP TRANSISTOR /Purpose Low Frequency Amplifier. , 2SC4115S(3DG4115S) Features Low V ,Excellent current gain characteristics; complementary pair with CE(sat) 2SC4115S(3DG4115S). /Absolute maximum ratings(Ta=25 )

 0.16. Size:182K  lzg
 3cg1316.pdf

2SA1316(3CG1316) PNP /SILICON PNP TRANSISTOR Purpose Low noise audio amplifier applications. , , 2SC3329(3DG3329) Features Low rbb , low noise figure, complementary pair with 2SC3329(3DG3329). /Absolute maximum ratings(Ta=25 )

 0.17. Size:230K  lzg
 3cg1621.pdf

2SA1621(3CG1621) PNP /SILICON PNP TRANSISTOR . Purpose Audio power amplifier application . , 2SC4210(3DG4210) Features High hFE,complementary pair with 2SC4210(3DG4210). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -30 V C

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 3cg1198k.pdf

2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1782K(3DG1782K) Features High breakdown,low V ,complements the 2SD1782K(3DG1782K). CE(sat) /Absolute maximum ratings(Ta=25 ) Sym

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 3cg1980.pdf

2SA1980(3CG1980) PNP /SILICON PNP TRANSISTOR Purpose General small signal amplifier applications. 2SC5343(3DG5343) Features Low V ,low output capacitance, complementary pair with 2SC5343(3DG5343). CE(sat) /Absolute maximum ratings(Ta=25 )

 0.20. Size:238K  lzg
 3cg1015.pdf

2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. , , h , , 2SC1815(3DG1815) FE Features High voltage and high current, excellent h linearity, low noise, FE complementary p

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 3cg1201.pdf

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 3cg1283.pdf

2SA1283(3CG1283) PNP /SILICON PNP TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -60 V CEO V -6.0 V EBO I -1.0 A C P 0.9 W C T 150 j T -55 150 stg /Electrical charact

 0.23. Size:247K  lzg
 3cg1030.pdf

2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR , 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). Features Optimum for high-density mounting. /Absolute Maximum Ratin

 0.24. Size:284K  lzg
 3cg1797.pdf

2SA1797(3CG1797) PNP /SILICON PNP TRANSISTOR , , 2SC4672(3DG4672) Features Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672(3DG4672). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO V -50 V

 0.25. Size:288K  lzg
 3cg1037ak.pdf

2SA1037AK(3CG1037AK) PNP /SILICON PNP TRANSISTOR /Purpose General amplifier applications. , 2SC2412K(3DG2412K) /Features Excellent h linearity, FE Complementary pair with 2SC2412K(3DG2412K). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V C

 0.26. Size:218K  lzg
 3cg1128.pdf

2SA1128(3CG1128) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency output amplifier. , 2SC1788(3DG1788) Features low V ,complementary pair with 2SC1788(3DG1788). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -25 V CBO V -20 V CEO

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 3cg1386.pdf

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 3cg1213.pdf

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 3cg1260.pdf

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 3cg1955.pdf

2SA1955(3CG1955) PNP /SILICON PNP TRANSISTOR Purpose General purpose amplifier and muting switch application . , Features Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -15 V CBO V -12 V

 0.31. Size:297K  lzg
 3cg1376.pdf

2SA1376(3CG1376) PNP /SILICON PNP TRANSISTOR Purpose General purpose amplifier applications requiring high breakdown voltages. , 2SC3478(3DG3478) Features High breakdown voltage, good h linearity, complementary to 2SC3478(3DG3478). FE /Absolute maxi

 0.32. Size:185K  lzg
 3cg1981m.pdf

2SA1981S(3CG1981M) PNP /SILICON PNP TRANSISTOR Purpose Audio power amplifier application. 2SC5344S(3DG5344M) Features High h , complementary pair with 2SC5344S(3DG5344M). FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -30

 0.33. Size:196K  lzg
 3cg1218a.pdf

2SB1218A(3CG1218A) PNP /SILICON PNP TRANSISTOR Purpose General amplification. , 2SD1819A(3DG1819A) Features High h complements the 2SD1819A(3DG1819A). FE , /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -45 V CBO V -45 V CEO V -7.0 V E

 0.34. Size:276K  lzg
 3cg1979s.pdf

2SA1979S(3CG1979S) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , , 2SC5342S(3DG5342S) Features Large I ,low V ,complementary pair with the 2SC5342S(3DG5342S). C CE(sat) /Absolute maximum ratings(Ta=25 )

 0.35. Size:381K  lzg
 3cg1132.pdf

2SB1132(3CG1132) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1664(3DG1664) Features Low saturation voltage, complements the 2SD1664(3DG1664). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -40 V

 0.36. Size:239K  lzg
 3cg1160.pdf

2SA1160(3CG1160) PNP /SILICON PNP TRANSISTOR , Purpose Strobe flash,medium power amplifier applications. , Features High DC current gain and excellent hFE linearity,low saturation voltage. /Absolute maximum ratings(Ta=25 )

 0.37. Size:180K  lzg
 3cg1426.pdf

2SB1426(3CG1426) PNP /SILICON PNP TRANSISTOR /Features Low saturation voltage. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -20 V V CEO -20 V V EBO -6.0 V I C -3.0 A P C 750 mW T j 150 T stg -55 150 /Electrical characteris

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 3cg1980m.pdf

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 3cg1013t.pdf

2SA1013T(3CG1013T) PNP /SILICON PNP TRANSISTOR , /Purpose Color TV vert.and class B sound output applications. , , 2SC2383T(3DG2383T) /Features High voltage, large continuous collector current capability, Complementary pair with 2SC2383T(3DG2383T). /Absolute maximum rat

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 3cg1203.pdf

2SA1203(3CG1203) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency amplifier applications. 3W 2SC2883 3DG2883 Features Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883(3DG2883). /Absolute maximum ratings(Ta=2

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 3cg1036k.pdf

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 3cg1424.pdf

2SB1424(3CG1424) PNP /SILICON PNP TRANSISTOR Purpose General purpose amplifier. Features Low V ,excellent DC current gain characteristics. CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -20 V CBO V -20

 0.43. Size:324K  lzg
 3cg1365.pdf

2SA1365(3CG1365) PNP /SILICON PNP TRANSISTOR Purpose Small type motor drive, relay drive, power supply. Features Low collector to emitter saturation voltage, excellent linearity of DC forward curren

 0.44. Size:262K  lzg
 3cg1189.pdf

2SB1189(3CG1189) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1767(3DG1767) Features Low V complements the 2SD1767(3DG1767). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -80 V CBO V -80 V C

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 3cg1320.pdf

2SA1320(3CG1320) PNP /SILICON PNP TRANSISTOR , Purpose High voltage switching, color TV chroma output applications . /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -250 V CBO V -250 V CEO V -5.0 V EBO I -50 mA C I -100 mA CP I -20 mA B P 600 mW

 0.46. Size:190K  lzg
 3cg1018.pdf

2SA1018(3CG1018) PNP /SILICON PNP TRANSISTOR /Purpose General amplifier. , 2SC1473(3DG1473) Features High V , Complementary pair with 2SC1473(3DG1473). CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -250 V CBO V -200 V CEO V -5.0 V EBO I -7

 0.47. Size:243K  lzg
 3cg1015m.pdf

2SA1015M(3CG1015M) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose amplifier applications, driver stage amplifier applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO V -50 V CEO V -5.0 V EBO I -150 mA C I -50 m

 0.48. Size:223K  lzg
 3cg1981.pdf

2SA1981(3CG1981) PNP /SILICON PNP TRANSISTOR Purpose Audio power amplifier application. 2SC5344(3DG5344) Features High h , complementary pair with 2SC5344(3DG5344). FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -30 V C

 0.49. Size:292K  lzg
 3cg1188.pdf

2SB1188(3CG1188) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1766(3DG1766) Features Low V complements the 2SD1766(3DG1766). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V C

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 3cg1030a.pdf

2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR , 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). Features Optimum for high-density mounting. /Absolute Maximum Ratin

 0.51. Size:262K  lzg
 3cg1440.pdf

2SB1440(3CG1440) PNP /SILICON PNP TRANSISTOR Purpose For low frequency output amplification 2SD2185(3DG2185) Features Low V , complementary to 2SD2185(3DG2185). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO

 0.52. Size:415K  lzg
 3cg1175.pdf

2SA1175(3CG1175) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of audio frequency amplifier. , , 2SC2785(3DG2785) Features High voltage and excellent h linearity, complementary pair with 2SC2785(3DG2785). FE /Absolute maximum ratings(Ta=25 )

 0.53. Size:254K  lzg
 3cg1576a.pdf

2SA1576A(3CG1576A) PNP /SILICON PNP TRANSISTOR Purpose General small signal amp , 2SC4081W(3DG4081W) . Features Low noise, complementary pair with 2SC4081W(3DG4081W). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO V -40 V C

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 3cg1577w.pdf

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 3cg1182.pdf

2SB1182(3CG1182) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1758(3DG1758) Features Low V complements the 2SD1758(3DG1758). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V

 0.56. Size:149K  lzg
 3cg1295.pdf

2SB1295(3CG1295) PNP /SILICON PNP TRANSISTOR Purpose AF power amplifier medium-speed switching, small-sized motor drivers. Features Large current capacity, low collector to emitter saturation voltage, very s

 0.57. Size:237K  lzg
 3cg1590k.pdf

2SB1590K(3CG1590K) PNP /SILICON PNP TRANSISTOR Purpose General power amplifier applications. , 2SD2444K(3DG2444K) Features Low V ,large current, complementary to 2SD2444K(3DG2444K). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol R

 0.58. Size:229K  lzg
 3cg1317.pdf

2SA1317(3CG1317) PNP /SILION PNP TRANSISTOR Purpose Capable of being used in the low frequency to high frequency range. /Features Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit

 0.59. Size:261K  lzg
 3cg1700.pdf

2SA1700(3CG1700) PNP /SILICON PNP TRANSISTOR Purpose High voltage driver applications. MBIT Features High breakdown voltage, adoption of MBIT process excellent hFE linearity. /Absolute maximum ratings(Ta=25 )

 0.60. Size:268K  lzg
 3cg1162.pdf

2SA1162(3CG1162) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency general purpose amplifier applications. , , , , 2SC2712(3DG2712) Features High voltage and current,excellent h linearity,high h ,low noise,complementary FE FE to 2SC2712(3

 0.61. Size:203K  lzg
 3cg1091.pdf

2SA1091(3CG1091) PNP /SILICON PNP TRANSISTOR , , /Purpose High voltage control, plasma display, nixie tube driver, cathode ray tube brightness control applications. , , /Features High voltage, low saturation voltage, small collector output cap

 0.62. Size:266K  lzg
 3cg1300.pdf

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 3cg1197k.pdf

2SB1197K(3CG1197K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency amplifier applications. , 2SD1781K(3DG1781K) Features Low V ,complements the 2SD1781K(3DG1781K). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32

 0.64. Size:287K  lzg
 3cg1048.pdf

2SA1048(3CG1048) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency amplifier applications. , , , h , , FE 2SC2458(3DG2458) /Features Small package, high voltage, high h , FE excellent h linearity, low noise, Complementary pair wi

 0.65. Size:31K  shaanxi
 3cg160.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG160,3CG170 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power

 0.66. Size:24K  shaanxi
 3cg102.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG102 PNP Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a

 0.67. Size:30K  shaanxi
 3cg120.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG120,3CG130 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power