3CG1 Datasheet and Replacement

   Type Designator: 3CG1
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO92 SOT23

3CG1 Substitution

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3CG1 Datasheet (PDF)

..1. Size:133K china
3cg1.pdf pdf_icon

3CG1 PNP A B C D E F G PCM TA=25 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.1mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V

0.1. Size:133K china
3cg110.pdf pdf_icon

3CG110 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.

0.2. Size:112K china
3cg1124.pdf pdf_icon

3CG1124 PNP PCM TA=25 500 mW ICM 3 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=10uA 60 V V(BR)CEO ICE=1mA 50 V V(BR)EBO IEB=10uA 6.0 V ICBO VCB=40V 1 A IEBO VEB=4V 1 A VBEsat 1.2 IC=2A V IB=100mA VCEsat 0.7 VCE=2V hFE 100~5

0.3. Size:125K china
3cg130.pdf pdf_icon

3CG130 PNP A B C D E F G PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1

0.4. Size:132K china
3cg112.pdf pdf_icon

3CG112 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0

0.5. Size:121K china
3cg17b.pdf pdf_icon

3CG17B PNP PCM TA=25 150 mW ICM 20 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 12 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=6V 0.2 A IC=10mA VCEsat 0.5 V IB=1mA VCE=6V hFE 30 IC=2mA VCE=5V fT IC=5mA 100 MHz fo=3

0.6. Size:121K china
3cg131.pdf pdf_icon

3CG131 PNP A B C D E PCM Tc=75 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 15 30 45 60 75 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A IEBO VE

0.7. Size:115K china
3cg12.pdf pdf_icon

3CG12 PNP A B C D E F G H I PCM TA=25 500 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 50 80 20 40 70 15 40 60 V V(BR)CEO ICE=0.1mA 15 40 70 15 30 60 12 30 50 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V

0.8. Size:103K china
3cg114b.pdf pdf_icon

3CG114B PNP PCM TA=25 1.0 W ICM 1.0 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VCE=2V

0.9. Size:118K china
3cg1013.pdf pdf_icon

3CG1013 PNP PCM TA=25 0.9 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A IEBO VEB=5V 0.5 A VBEsat 1.5 IC=500mA V IB=50mA

0.10. Size:115K china
3cg1020.pdf pdf_icon

3CG1020(2SA1020) PNP PCM TA=25 900 mW ICM 2 A Tjm 150 Tstg -55~150 V(BR)CBO ICB0.1mA 50 V V(BR)CEO ICE0.1mA 50 V V(BR)EBO IEB0.1mA 5.0 V ICBO VCB=50V 1.0 A VBEsat 1.2 IC=1000mA V IB=50mA VCEsat 0.5 VCE=2V, hFE 70

0.11. Size:124K china
3cg180.pdf pdf_icon

3CG180 PNP A B C D E F G PCM 700 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 120 160 200 240 120 160 200 V V(BR)CEO ICE=0.1mA 100 140 180 220 100 140 180 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 0.5 A ICEO

0.12. Size:119K china
3cg182.pdf pdf_icon

3CG182 PNP A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 120 160 200 240 V V(BR)CEO ICE=0.1mA 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 0.5 A ICEO VCE=30V 1.0 A IEBO VEB=2V 0.5 A

0.13. Size:132K china
3cg111.pdf pdf_icon

3CG111 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.

0.14. Size:98K china
3cg170.pdf pdf_icon

LJ2015-373CG170 PNP A B C D EP Ta=25 500 mWCMI 50 mACMT 175 jmT -55~150 stgV I =0.1mA 80 120 160 200 240 V(BR)CBO CBV I =0.1mA 60 100 140 180 200 V(BR)CEO CEV I =0.1mA 4.0 V(BR)EBO EB I V =3

0.15. Size:259K lzg
3cg1585s.pdf pdf_icon

2SA1585S(3CG1585S) PNP /SILICON PNP TRANSISTOR :/Purpose: Low Frequency Amplifier. :, 2SC4115S(3DG4115S) Features: Low V ,Excellent current gain characteristics; complementary pair with CE(sat)2SC4115S(3DG4115S). /Absolute maximum ratings(Ta=25)

0.16. Size:182K lzg
3cg1316.pdf pdf_icon

2SA1316(3CG1316) PNP /SILICON PNP TRANSISTOR : Purpose: Low noise audio amplifier applications. :,, 2SC3329(3DG3329) Features: Low rbb, low noise figure, complementary pair with 2SC3329(3DG3329). /Absolute maximum ratings(Ta=25)

0.17. Size:230K lzg
3cg1621.pdf pdf_icon

2SA1621(3CG1621) PNP /SILICON PNP TRANSISTOR . Purpose: Audio power amplifier application . , 2SC4210(3DG4210) Features: High hFE,complementary pair with 2SC4210(3DG4210). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO V -30 V C

0.18. Size:267K lzg
3cg1198k.pdf pdf_icon

2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD1782K(3DG1782K) Features: High breakdown,low V ,complements the 2SD1782K(3DG1782K). CE(sat)/Absolute maximum ratings(Ta=25) Sym

0.19. Size:220K lzg
3cg1980.pdf pdf_icon

2SA1980(3CG1980) PNP /SILICON PNP TRANSISTOR : Purpose: General small signal amplifier applications. : 2SC5343(3DG5343) Features: Low V ,low output capacitance, complementary pair with 2SC5343(3DG5343). CE(sat)/Absolute maximum ratings(Ta=25)

0.20. Size:238K lzg
3cg1015.pdf pdf_icon

2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, h ,, 2SC1815(3DG1815) FEFeatures: High voltage and high current, excellent h linearity, low noise, FEcomplementary p

0.21. Size:317K lzg
3cg1201.pdf pdf_icon

2SA1201(3CG1201) PNP /SILICON PNP TRANSISTOR : Purpose: power amplifier applications. ,, 2SC2881(3DG2881) Features: High f , high V , small flat package, complementary pair with 2SC2881(3DG2881). T CEO/Absolute maximum ratings(Ta=25)

0.22. Size:235K lzg
3cg1283.pdf pdf_icon

2SA1283(3CG1283) PNP /SILICON PNP TRANSISTOR Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -60 V CEO V -6.0 V EBO I -1.0 A C P 0.9 W CT 150 j T -55150 stg /Electrical charact

0.23. Size:247K lzg
3cg1030.pdf pdf_icon

2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR :, 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose: Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). : Features: Optimum for high-density mounting. /Absolute Maximum Ratin

0.24. Size:284K lzg
3cg1797.pdf pdf_icon

2SA1797(3CG1797) PNP /SILICON PNP TRANSISTOR :,, 2SC4672(3DG4672) Features: Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672(3DG4672). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO V -50 V

0.25. Size:288K lzg
3cg1037ak.pdf pdf_icon

2SA1037AK(3CG1037AK) PNP /SILICON PNP TRANSISTOR : /Purpose: General amplifier applications. :, 2SC2412K(3DG2412K)/Features: Excellent h linearity, FEComplementary pair with 2SC2412K(3DG2412K). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V C

0.26. Size:218K lzg
3cg1128.pdf pdf_icon

2SA1128(3CG1128) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency output amplifier. :, 2SC1788(3DG1788) Features: low V ,complementary pair with 2SC1788(3DG1788). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -25 V CBO V -20 V CEO

0.27. Size:370K lzg
3cg1386.pdf pdf_icon

2SB1386(3CG1386) PNP /SILICON PNP TRANSISTOR : Purpose: General power amplifier applications. ,, 2SD2098(3DG2098) Features: Low V , excellent DC current gain , complements the 2SD2098(3DG2098). CE(sat)/Absolute maximum ratings(Ta=25)

0.28. Size:256K lzg
3cg1213.pdf pdf_icon

2SA1213(3CG1213) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier and switching applications. : , 2SC2873(3DG2873) Features: Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SC2873(3DG2873).

0.29. Size:178K lzg
3cg1260.pdf pdf_icon

2SB1260(3CG1260) PNP /SILICON PNP TRANSISTOR Purpose: Power amplifier applications. : 2SD1898(3DG1898) Features: High breakdown voltage, good h linearity, low V , complements FE CE(sat)the 2SD1898(3DG1898). /Absolute maximum ratings(Ta=25

0.30. Size:220K lzg
3cg1955.pdf pdf_icon

2SA1955(3CG1955) PNP /SILICON PNP TRANSISTOR : Purpose: General purpose amplifier and muting switch application . , Features: Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -15 V CBO V -12 V

0.31. Size:297K lzg
3cg1376.pdf pdf_icon

2SA1376(3CG1376) PNP /SILICON PNP TRANSISTOR : Purpose: General purpose amplifier applications requiring high breakdown voltages. : , 2SC3478(3DG3478) Features: High breakdown voltage, good h linearity, complementary to 2SC3478(3DG3478). FE/Absolute maxi

0.32. Size:185K lzg
3cg1981m.pdf pdf_icon

2SA1981S(3CG1981M) PNP /SILICON PNP TRANSISTOR : Purpose: Audio power amplifier application. : 2SC5344S(3DG5344M) Features: High h , complementary pair with 2SC5344S(3DG5344M). FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO V -30

0.33. Size:196K lzg
3cg1218a.pdf pdf_icon

2SB1218A(3CG1218A) PNP /SILICON PNP TRANSISTOR Purpose: General amplification. :, 2SD1819A(3DG1819A) Features: High h complements the 2SD1819A(3DG1819A). FE, /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -45 V CBO V -45 V CEO V -7.0 V E

0.34. Size:276K lzg
3cg1979s.pdf pdf_icon

2SA1979S(3CG1979S) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. ,, 2SC5342S(3DG5342S) Features: Large I ,low V ,complementary pair with the 2SC5342S(3DG5342S). C CE(sat)/Absolute maximum ratings(Ta=25)

0.35. Size:381K lzg
3cg1132.pdf pdf_icon

2SB1132(3CG1132) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. , 2SD1664(3DG1664) Features: Low saturation voltage, complements the 2SD1664(3DG1664). /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -40 V

0.36. Size:239K lzg
3cg1160.pdf pdf_icon

2SA1160(3CG1160) PNP /SILICON PNP TRANSISTOR :, Purpose: Strobe flash,medium power amplifier applications. , Features: High DC current gain and excellent hFE linearity,low saturation voltage. /Absolute maximum ratings(Ta=25)

0.37. Size:180K lzg
3cg1426.pdf pdf_icon

2SB1426(3CG1426) PNP /SILICON PNP TRANSISTOR /Features: Low saturation voltage. /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -20 V VCEO -20 V VEBO -6.0 V IC -3.0 A PC 750 mW Tj 150 Tstg -55150 /Electrical characteris

0.38. Size:240K lzg
3cg1980m.pdf pdf_icon

2SA1980S(3CG1980M) PNP /SILICON PNP TRANSISTOR : Purpose: General small signal amplifier applications. 2SC5343S(3DG5343M) Features: Low V , low output capacitance, complementary pair with 2SC5343S(3DG5343M). CE(sat)/Absolute maximum ratings(Ta=25)

0.39. Size:248K lzg
3cg1013t.pdf pdf_icon

2SA1013T(3CG1013T) PNP /SILICON PNP TRANSISTOR :,/Purpose: Color TV vert.and class B sound output applications. :,, 2SC2383T(3DG2383T)/Features: High voltage, large continuous collector current capability, Complementary pair with 2SC2383T(3DG2383T). /Absolute maximum rat

0.40. Size:263K lzg
3cg1203.pdf pdf_icon

2SA1203(3CG1203) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency amplifier applications. 3W 2SC28833DG2883 Features: Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883(3DG2883). /Absolute maximum ratings(Ta=2

0.41. Size:873K lzg
3cg1036k.pdf pdf_icon

2SA1036K(3CG1036K) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier applications. : 2SC2411K3DG2411K Features: .Large Ic low Vce(sat),complementary pair with the 2SC2411K(3DG2411K). /Absolute maximum ratings(Ta=25)

0.42. Size:233K lzg
3cg1424.pdf pdf_icon

2SB1424(3CG1424) PNP /SILICON PNP TRANSISTOR : Purpose: General purpose amplifier. : Features: Low V ,excellent DC current gain characteristics. CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -20 V CBO V -20

0.43. Size:324K lzg
3cg1365.pdf pdf_icon

2SA1365(3CG1365) PNP /SILICON PNP TRANSISTOR : Purpose: Small type motor drive, relay drive, power supply. : Features: Low collector to emitter saturation voltage, excellent linearity of DC forward curren

0.44. Size:262K lzg
3cg1189.pdf pdf_icon

2SB1189(3CG1189) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD1767(3DG1767) Features: Low V complements the 2SD1767(3DG1767). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -80 V CBO V -80 V C

0.45. Size:373K lzg
3cg1320.pdf pdf_icon

2SA1320(3CG1320) PNP /SILICON PNP TRANSISTOR :, Purpose: High voltage switching, color TV chroma output applications . /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -250 V CBO V -250 V CEO V -5.0 V EBO I -50 mA CI -100 mA CPI -20 mA BP 600 mW

0.46. Size:190K lzg
3cg1018.pdf pdf_icon

2SA1018(3CG1018) PNP /SILICON PNP TRANSISTOR :/Purpose: General amplifier. :, 2SC1473(3DG1473) Features: High V , Complementary pair with 2SC1473(3DG1473). CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -250 V CBO V -200 V CEO V -5.0 V EBO I -7

0.47. Size:243K lzg
3cg1015m.pdf pdf_icon

2SA1015M(3CG1015M) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose amplifier applications, driver stage amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO V -50 V CEO V -5.0 V EBO I -150 mA C I -50 m

0.48. Size:223K lzg
3cg1981.pdf pdf_icon

2SA1981(3CG1981) PNP /SILICON PNP TRANSISTOR : Purpose: Audio power amplifier application. : 2SC5344(3DG5344) Features: High h , complementary pair with 2SC5344(3DG5344). FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO V -30 V C

0.49. Size:292K lzg
3cg1188.pdf pdf_icon

2SB1188(3CG1188) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD1766(3DG1766) Features: Low V complements the 2SD1766(3DG1766). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -32 V C

0.50. Size:247K lzg
3cg1030a.pdf pdf_icon

0.51. Size:262K lzg
3cg1440.pdf pdf_icon

2SB1440(3CG1440) PNP /SILICON PNP TRANSISTOR Purpose: For low frequency output amplification 2SD2185(3DG2185) Features: Low V , complementary to 2SD2185(3DG2185). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO

0.52. Size:415K lzg
3cg1175.pdf pdf_icon

2SA1175(3CG1175) PNP /SILICON PNP TRANSISTOR :/Purpose: Driver stage of audio frequency amplifier. :,, 2SC2785(3DG2785) Features: High voltage and excellent h linearity, complementary pair with 2SC2785(3DG2785). FE/Absolute maximum ratings(Ta=25)

0.53. Size:254K lzg
3cg1576a.pdf pdf_icon

2SA1576A(3CG1576A) PNP /SILICON PNP TRANSISTOR : Purpose: General small signal amp : , 2SC4081W(3DG4081W). Features: Low noise, complementary pair with 2SC4081W(3DG4081W). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO V -40 V C

0.54. Size:197K lzg
3cg1577w.pdf pdf_icon

2SA1577W(3CG1577W) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier applications. : 2SC1741S3DG1741S Features: .Large Ic low Vce(sat),complementary pair with the 2SC1741S(3DG1741S). /Absolute maximum ratings(Ta=25)

0.55. Size:219K lzg
3cg1182.pdf pdf_icon

2SB1182(3CG1182) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD1758(3DG1758) Features: Low V complements the 2SD1758(3DG1758). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -32 V

0.56. Size:149K lzg
3cg1295.pdf pdf_icon

2SB1295(3CG1295) PNP /SILICON PNP TRANSISTOR : Purpose: AF power amplifiermedium-speed switching, small-sized motor drivers. : Features: Large current capacity, low collector to emitter saturation voltage, very s

0.57. Size:237K lzg
3cg1590k.pdf pdf_icon

2SB1590K(3CG1590K) PNP /SILICON PNP TRANSISTOR : Purpose: General power amplifier applications. : , 2SD2444K(3DG2444K) Features: Low V ,large current, complementary to 2SD2444K(3DG2444K). CE(sat)/Absolute maximum ratings(Ta=25) Symbol R

0.58. Size:229K lzg
3cg1317.pdf pdf_icon

2SA1317(3CG1317) PNP /SILION PNP TRANSISTOR : Purpose: Capable of being used in the low frequency to high frequency range. :/Features: Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25) Symbol Rating Unit

0.59. Size:261K lzg
3cg1700.pdf pdf_icon

2SA1700(3CG1700) PNP /SILICON PNP TRANSISTOR Purpose: High voltage driver applications. MBIT FeaturesHigh breakdown voltage, adoption of MBIT process excellent hFE linearity. /Absolute maximum ratings(Ta=25)

0.60. Size:268K lzg
3cg1162.pdf pdf_icon

2SA1162(3CG1162) PNP /SILICON PNP TRANSISTOR :/Purpose:Audio frequency general purpose amplifier applications. :,,,, 2SC2712(3DG2712) Features:High voltage and current,excellent h linearity,high h ,low noise,complementary FE FEto 2SC2712(3

0.61. Size:203K lzg
3cg1091.pdf pdf_icon

2SA1091(3CG1091) PNP /SILICON PNP TRANSISTOR :,,/Purpose: High voltage control, plasma display, nixie tube driver, cathode ray tube brightness control applications. :,,/Features: High voltage, low saturation voltage, small collector output cap

0.62. Size:266K lzg
3cg1300.pdf pdf_icon

2SA1300(3CG1300) PNP /SILION PNP TRANSISTOR :, Purpose: Strobo flash, medium power amplifier applications. : Features: High DC current gain, excellent h linearity, low saturation voltage. FE/Absolute maximum ratings(Ta=25)

0.63. Size:230K lzg
3cg1197k.pdf pdf_icon

2SB1197K(3CG1197K) PNP /SILICON PNP TRANSISTOR : Purpose: Low frequency amplifier applications. :, 2SD1781K(3DG1781K) Features: Low V ,complements the 2SD1781K(3DG1781K). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -32

0.64. Size:287K lzg
3cg1048.pdf pdf_icon

2SA1048(3CG1048) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier applications. :,,, h ,, FE 2SC2458(3DG2458)/Features: Small package, high voltage, high h , FEexcellent h linearity, low noise, Complementary pair wi

0.65. Size:31K shaanxi
3cg160.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG160,3CG170 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power

0.66. Size:24K shaanxi
3cg102.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG102PNP Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a

0.67. Size:30K shaanxi
3cg120.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG120,3CG130 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power

Datasheet: 3CD6126 , 3CD8 , 3CD834 , 3CD837 , 3CD9 , 3CD940 , 3CF1 , 3CF5 , 2SC2383Y , 3CG1013 , 3CG1013T , 3CG1015 , 3CG1015M , 3CG1018 , 3CG102 , 3CG1020 , 3CG1030 .