3CG1 Specs and Replacement

Type Designator: 3CG1

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO92 SOT23

 3CG1 Substitution

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3CG1 datasheet

 ..1. Size:133K  china

3cg1.pdf pdf_icon

3CG1

3CG1 PNP A B C D E F G PCM TA=25 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.1mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V ... See More ⇒

 0.1. Size:133K  china

3cg110.pdf pdf_icon

3CG1

3CG110 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.... See More ⇒

 0.2. Size:112K  china

3cg1124.pdf pdf_icon

3CG1

3CG1124 PNP PCM TA=25 500 mW ICM 3 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=10uA 60 V V(BR)CEO ICE=1mA 50 V V(BR)EBO IEB=10uA 6.0 V ICBO VCB=40V 1 A IEBO VEB=4V 1 A VBEsat 1.2 IC=2A V IB=100mA VCEsat 0.7 VCE=2V hFE 100 5... See More ⇒

 0.3. Size:125K  china

3cg130.pdf pdf_icon

3CG1

3CG130 PNP A B C D E F G PCM 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1... See More ⇒

Detailed specifications: 3CD6126, 3CD8, 3CD834, 3CD837, 3CD9, 3CD940, 3CF1, 3CF5, 2SC5198, 3CG1013, 3CG1013T, 3CG1015, 3CG1015M, 3CG1018, 3CG102, 3CG1020, 3CG1030

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