3CG1 Specs and Replacement
Type Designator: 3CG1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
3CG1 Substitution
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3CG1 datasheet
3CG1 PNP A B C D E F G PCM TA=25 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.1mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V ... See More ⇒
3CG110 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.... See More ⇒
3CG1124 PNP PCM TA=25 500 mW ICM 3 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=10uA 60 V V(BR)CEO ICE=1mA 50 V V(BR)EBO IEB=10uA 6.0 V ICBO VCB=40V 1 A IEBO VEB=4V 1 A VBEsat 1.2 IC=2A V IB=100mA VCEsat 0.7 VCE=2V hFE 100 5... See More ⇒
3CG130 PNP A B C D E F G PCM 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1... See More ⇒
3CG112 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0... See More ⇒
3CG17B PNP PCM TA=25 150 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.1mA 12 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=6V 0.2 A IC=10mA VCEsat 0.5 V IB=1mA VCE=6V hFE 30 IC=2mA VCE=5V fT IC=5mA 100 MHz fo=3... See More ⇒
3CG131 PNP A B C D E PCM Tc=75 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 15 30 45 60 75 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A IEBO VE... See More ⇒
3CG114B PNP PCM TA=25 1.0 W ICM 1.0 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VCE=2V... See More ⇒
3CG1013 PNP PCM TA=25 0.9 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A IEBO VEB=5V 0.5 A VBEsat 1.5 IC=500mA V IB=50mA ... See More ⇒
3CG180 PNP A B C D E F G PCM 700 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 120 160 200 240 120 160 200 V V(BR)CEO ICE=0.1mA 100 140 180 220 100 140 180 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 0.5 A ICEO ... See More ⇒
3CG182 PNP A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 120 160 200 240 V V(BR)CEO ICE=0.1mA 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 0.5 A ICEO VCE=30V 1.0 A IEBO VEB=2V 0.5 A... See More ⇒
3CG111 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.... See More ⇒
LJ2015-37 3CG170 PNP A B C D E P Ta=25 500 mW CM I 50 mA CM T 175 jm T -55 150 stg V I =0.1mA 80 120 160 200 240 V (BR)CBO CB V I =0.1mA 60 100 140 180 200 V (BR)CEO CE V I =0.1mA 4.0 V (BR)EBO EB I V =3... See More ⇒
2SA1585S(3CG1585S) PNP /SILICON PNP TRANSISTOR /Purpose Low Frequency Amplifier. , 2SC4115S(3DG4115S) Features Low V ,Excellent current gain characteristics; complementary pair with CE(sat) 2SC4115S(3DG4115S). /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SA1316(3CG1316) PNP /SILICON PNP TRANSISTOR Purpose Low noise audio amplifier applications. , , 2SC3329(3DG3329) Features Low rbb , low noise figure, complementary pair with 2SC3329(3DG3329). /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SA1621(3CG1621) PNP /SILICON PNP TRANSISTOR . Purpose Audio power amplifier application . , 2SC4210(3DG4210) Features High hFE,complementary pair with 2SC4210(3DG4210). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -30 V C... See More ⇒
2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1782K(3DG1782K) Features High breakdown,low V ,complements the 2SD1782K(3DG1782K). CE(sat) /Absolute maximum ratings(Ta=25 ) Sym... See More ⇒
2SA1980(3CG1980) PNP /SILICON PNP TRANSISTOR Purpose General small signal amplifier applications. 2SC5343(3DG5343) Features Low V ,low output capacitance, complementary pair with 2SC5343(3DG5343). CE(sat) /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. , , h , , 2SC1815(3DG1815) FE Features High voltage and high current, excellent h linearity, low noise, FE complementary p... See More ⇒
2SA1283(3CG1283) PNP /SILICON PNP TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -60 V CEO V -6.0 V EBO I -1.0 A C P 0.9 W C T 150 j T -55 150 stg /Electrical charact... See More ⇒
2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR , 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). Features Optimum for high-density mounting. /Absolute Maximum Ratin... See More ⇒
2SA1797(3CG1797) PNP /SILICON PNP TRANSISTOR , , 2SC4672(3DG4672) Features Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672(3DG4672). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO V -50 V... See More ⇒
2SA1037AK(3CG1037AK) PNP /SILICON PNP TRANSISTOR /Purpose General amplifier applications. , 2SC2412K(3DG2412K) /Features Excellent h linearity, FE Complementary pair with 2SC2412K(3DG2412K). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V C... See More ⇒
2SA1128(3CG1128) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency output amplifier. , 2SC1788(3DG1788) Features low V ,complementary pair with 2SC1788(3DG1788). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -25 V CBO V -20 V CEO... See More ⇒
2SA1955(3CG1955) PNP /SILICON PNP TRANSISTOR Purpose General purpose amplifier and muting switch application . , Features Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -15 V CBO V -12 V ... See More ⇒
2SA1376(3CG1376) PNP /SILICON PNP TRANSISTOR Purpose General purpose amplifier applications requiring high breakdown voltages. , 2SC3478(3DG3478) Features High breakdown voltage, good h linearity, complementary to 2SC3478(3DG3478). FE /Absolute maxi... See More ⇒
2SA1981S(3CG1981M) PNP /SILICON PNP TRANSISTOR Purpose Audio power amplifier application. 2SC5344S(3DG5344M) Features High h , complementary pair with 2SC5344S(3DG5344M). FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -30... See More ⇒
2SB1218A(3CG1218A) PNP /SILICON PNP TRANSISTOR Purpose General amplification. , 2SD1819A(3DG1819A) Features High h complements the 2SD1819A(3DG1819A). FE , /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -45 V CBO V -45 V CEO V -7.0 V E... See More ⇒
2SA1979S(3CG1979S) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , , 2SC5342S(3DG5342S) Features Large I ,low V ,complementary pair with the 2SC5342S(3DG5342S). C CE(sat) /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SB1132(3CG1132) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1664(3DG1664) Features Low saturation voltage, complements the 2SD1664(3DG1664). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -40 V ... See More ⇒
2SA1160(3CG1160) PNP /SILICON PNP TRANSISTOR , Purpose Strobe flash,medium power amplifier applications. , Features High DC current gain and excellent hFE linearity,low saturation voltage. /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SB1426(3CG1426) PNP /SILICON PNP TRANSISTOR /Features Low saturation voltage. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -20 V V CEO -20 V V EBO -6.0 V I C -3.0 A P C 750 mW T j 150 T stg -55 150 /Electrical characteris... See More ⇒
2SA1013T(3CG1013T) PNP /SILICON PNP TRANSISTOR , /Purpose Color TV vert.and class B sound output applications. , , 2SC2383T(3DG2383T) /Features High voltage, large continuous collector current capability, Complementary pair with 2SC2383T(3DG2383T). /Absolute maximum rat... See More ⇒
2SA1203(3CG1203) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency amplifier applications. 3W 2SC2883 3DG2883 Features Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883(3DG2883). /Absolute maximum ratings(Ta=2... See More ⇒
2SB1424(3CG1424) PNP /SILICON PNP TRANSISTOR Purpose General purpose amplifier. Features Low V ,excellent DC current gain characteristics. CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -20 V CBO V -20... See More ⇒
2SA1365(3CG1365) PNP /SILICON PNP TRANSISTOR Purpose Small type motor drive, relay drive, power supply. Features Low collector to emitter saturation voltage, excellent linearity of DC forward curren... See More ⇒
2SB1189(3CG1189) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1767(3DG1767) Features Low V complements the 2SD1767(3DG1767). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -80 V CBO V -80 V C... See More ⇒
2SA1320(3CG1320) PNP /SILICON PNP TRANSISTOR , Purpose High voltage switching, color TV chroma output applications . /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -250 V CBO V -250 V CEO V -5.0 V EBO I -50 mA C I -100 mA CP I -20 mA B P 600 mW ... See More ⇒
2SA1018(3CG1018) PNP /SILICON PNP TRANSISTOR /Purpose General amplifier. , 2SC1473(3DG1473) Features High V , Complementary pair with 2SC1473(3DG1473). CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -250 V CBO V -200 V CEO V -5.0 V EBO I -7... See More ⇒
2SA1015M(3CG1015M) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose amplifier applications, driver stage amplifier applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO V -50 V CEO V -5.0 V EBO I -150 mA C I -50 m... See More ⇒
2SA1981(3CG1981) PNP /SILICON PNP TRANSISTOR Purpose Audio power amplifier application. 2SC5344(3DG5344) Features High h , complementary pair with 2SC5344(3DG5344). FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO V -30 V C... See More ⇒
2SB1188(3CG1188) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1766(3DG1766) Features Low V complements the 2SD1766(3DG1766). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V C... See More ⇒
2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR , 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). Features Optimum for high-density mounting. /Absolute Maximum Ratin... See More ⇒
2SB1440(3CG1440) PNP /SILICON PNP TRANSISTOR Purpose For low frequency output amplification 2SD2185(3DG2185) Features Low V , complementary to 2SD2185(3DG2185). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO... See More ⇒
2SA1175(3CG1175) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of audio frequency amplifier. , , 2SC2785(3DG2785) Features High voltage and excellent h linearity, complementary pair with 2SC2785(3DG2785). FE /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SA1576A(3CG1576A) PNP /SILICON PNP TRANSISTOR Purpose General small signal amp , 2SC4081W(3DG4081W) . Features Low noise, complementary pair with 2SC4081W(3DG4081W). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO V -40 V C... See More ⇒
2SB1182(3CG1182) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1758(3DG1758) Features Low V complements the 2SD1758(3DG1758). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V ... See More ⇒
2SB1295(3CG1295) PNP /SILICON PNP TRANSISTOR Purpose AF power amplifier medium-speed switching, small-sized motor drivers. Features Large current capacity, low collector to emitter saturation voltage, very s... See More ⇒
2SB1590K(3CG1590K) PNP /SILICON PNP TRANSISTOR Purpose General power amplifier applications. , 2SD2444K(3DG2444K) Features Low V ,large current, complementary to 2SD2444K(3DG2444K). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol R... See More ⇒
2SA1317(3CG1317) PNP /SILION PNP TRANSISTOR Purpose Capable of being used in the low frequency to high frequency range. /Features Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit ... See More ⇒
2SA1700(3CG1700) PNP /SILICON PNP TRANSISTOR Purpose High voltage driver applications. MBIT Features High breakdown voltage, adoption of MBIT process excellent hFE linearity. /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SA1162(3CG1162) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency general purpose amplifier applications. , , , , 2SC2712(3DG2712) Features High voltage and current,excellent h linearity,high h ,low noise,complementary FE FE to 2SC2712(3... See More ⇒
2SA1091(3CG1091) PNP /SILICON PNP TRANSISTOR , , /Purpose High voltage control, plasma display, nixie tube driver, cathode ray tube brightness control applications. , , /Features High voltage, low saturation voltage, small collector output cap... See More ⇒
2SB1197K(3CG1197K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency amplifier applications. , 2SD1781K(3DG1781K) Features Low V ,complements the 2SD1781K(3DG1781K). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 ... See More ⇒
2SA1048(3CG1048) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency amplifier applications. , , , h , , FE 2SC2458(3DG2458) /Features Small package, high voltage, high h , FE excellent h linearity, low noise, Complementary pair wi... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG160,3CG170 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG102 PNP Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG120,3CG130 PNP Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power... See More ⇒
Detailed specifications: 3CD6126, 3CD8, 3CD834, 3CD837, 3CD9, 3CD940, 3CF1, 3CF5, 2SC5198, 3CG1013, 3CG1013T, 3CG1015, 3CG1015M, 3CG1018, 3CG102, 3CG1020, 3CG1030
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