3CG854S
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3CG854S
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 32
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TO92S
Búsqueda de reemplazo de transistor bipolar 3CG854S
3CG854S
Datasheet (PDF)
..1. Size:389K lzg
3cg854s.pdf 
2SA854S(3CG854S) PNP /SILICON PNP TRANSISTOR : Purpose: General power amplifier applications. :,, 2SC1741S(3DG1741S) Features: Large I , Low V ,complements the 2SC1741S(3DG1741S). C CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40
9.1. Size:109K jiangsu
3cg8551.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3CG8551 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3DG8051 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Vo
9.2. Size:553K jilin sino
3cg8550.pdf
PNP PNP EPITAXIAL SILICON TRANSISTOR R3CG8550 MAIN CHARACTERISTICS Package I -1.5A CV -25V CEOP 1W C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92
9.3. Size:129K china
3cg857b.pdf
3CG857B(BC857B) PNP PCM TA=25 250 mW ICM 200 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.01mA 50 V V(BR)CEO ICE=10mA 45 V V(BR)EBO IEB=0.001mA 5.0 V ICBO VCB=30V 15.0 A IEBO VEB=5.0V 0.1 A VBEsat 850 IC=100mA V IB=5mA VCEsat
9.4. Size:184K foshan
3cg8550a.pdf
S8550A(3CG8550A) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8050A(3DG8050A) C CFeatures: High P and I , complementary pair with S8050A(3DG8050A). C C/Absolute maximum ratings(Ta=25) Symbol Rati
9.5. Size:136K foshan
3cg8550m s8550m.pdf
S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. : S8050M(3DG8050M)/Features: Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA
9.6. Size:221K foshan
3cg8550.pdf
S8550(3CG8550) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8050(3DG8050) C CFeatures: High P and I , complementary pair with S8050(3DG8050). C C/Absolute maximum ratings(Ta=25) Symbol Rating Uni
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