3CG854S Specs and Replacement
Type Designator: 3CG854S
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92S
3CG854S Substitution
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3CG854S datasheet
2SA854S(3CG854S) PNP /SILICON PNP TRANSISTOR Purpose General power amplifier applications. , , 2SC1741S(3DG1741S) Features Large I , Low V ,complements the 2SC1741S(3DG1741S). C CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3CG8551 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3DG8051 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Vo... See More ⇒
3CG857B(BC857B) PNP PCM TA=25 250 mW ICM 200 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.01mA 50 V V(BR)CEO ICE=10mA 45 V V(BR)EBO IEB=0.001mA 5.0 V ICBO VCB=30V 15.0 A IEBO VEB=5.0V 0.1 A VBEsat 850 IC=100mA V IB=5mA VCEsat ... See More ⇒
Detailed specifications: 3CG778A , 3CG790A , 3CG798 , 3CG807-16 , 3CG812 , 3CG817A , 3CG838 , 3CG844 , A42 , 3CG8550 , 3CG8550A , 3CG8551 , 3CG857B , 3CG893 , 3CG9 , 3CG9012 , 3CG926 .
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