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3DD162 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD162
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 3DD162

 

3DD162 Datasheet (PDF)

 ..1. Size:27K  shaanxi
3dd162.pdf

3DD162

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD162(3DD163)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

 0.1. Size:138K  china
3dd162-s.pdf

3DD162

3DD162-S NPN PCM Tc=25 75 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2.0 /W Ic=1.5A 25Tc75 V(BR)CBO ICB=5mA 80 V V(BR)CEO ICE=5mA 80 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=80V, 50 A ICEO VCE=70V 1.0 mA IEBO VEB=5.0V 0.5 m

 9.1. Size:127K  china
3dd164.pdf

3DD162

3DD164 NPN A B C D E F G PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=5

 9.2. Size:123K  china
3dd167.pdf

3DD162

3DD167 NPN A B C D E F G PCM TC=75 150 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.66 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VC

 9.3. Size:193K  inchange semiconductor
3dd167e.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.4. Size:193K  inchange semiconductor
3dd167d.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.5. Size:193K  inchange semiconductor
3dd167f.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.6. Size:232K  inchange semiconductor
3dd164f.pdf

3DD162
3DD162

isc Silicon NPN Power Transistor 3DD164FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 9.7. Size:193K  inchange semiconductor
3dd167c.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.8. Size:193K  inchange semiconductor
3dd167a.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.9. Size:193K  inchange semiconductor
3dd167b.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: CIL423F | NA21ZG | 2N2142A

 

 
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