3DD162 Datasheet and Replacement
Type Designator: 3DD162
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 7.5
A
Max. Operating Junction Temperature (Tj): 175
°C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO3
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3DD162 Datasheet (PDF)
..1. Size:27K shaanxi
3dd162.pdf 

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD162(3DD163)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8
0.1. Size:138K china
3dd162-s.pdf 

3DD162-S NPN PCM Tc=25 75 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2.0 /W Ic=1.5A 25Tc75 V(BR)CBO ICB=5mA 80 V V(BR)CEO ICE=5mA 80 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=80V, 50 A ICEO VCE=70V 1.0 mA IEBO VEB=5.0V 0.5 m
9.1. Size:127K china
3dd164.pdf 

3DD164 NPN A B C D E F G PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=5
9.2. Size:123K china
3dd167.pdf 

3DD167 NPN A B C D E F G PCM TC=75 150 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.66 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VC
9.3. Size:193K inchange semiconductor
3dd167e.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
9.4. Size:193K inchange semiconductor
3dd167d.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
9.5. Size:193K inchange semiconductor
3dd167f.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
9.6. Size:232K inchange semiconductor
3dd164f.pdf 

isc Silicon NPN Power Transistor 3DD164FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
9.7. Size:193K inchange semiconductor
3dd167c.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
9.8. Size:193K inchange semiconductor
3dd167a.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
9.9. Size:193K inchange semiconductor
3dd167b.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2N3200
, 2N3201
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, B772
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, 2N3209L
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, 2N3210
, 2N3211
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History: TI413
| KRA741U
| D60T5050
| 3DD13007_Z8
| MMT8015
| 2N6512
| ZXTP2012Z
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