Справочник транзисторов. 3DD162

 

Биполярный транзистор 3DD162 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 3DD162
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 75 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 7.5 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO3

 Аналоги (замена) для 3DD162

 

 

3DD162 Datasheet (PDF)

 ..1. Size:27K  shaanxi
3dd162.pdf

3DD162

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD162(3DD163)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

 0.1. Size:138K  china
3dd162-s.pdf

3DD162

3DD162-S NPN PCM Tc=25 75 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2.0 /W Ic=1.5A 25Tc75 V(BR)CBO ICB=5mA 80 V V(BR)CEO ICE=5mA 80 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=80V, 50 A ICEO VCE=70V 1.0 mA IEBO VEB=5.0V 0.5 m

 9.1. Size:127K  china
3dd164.pdf

3DD162

3DD164 NPN A B C D E F G PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=5

 9.2. Size:123K  china
3dd167.pdf

3DD162

3DD167 NPN A B C D E F G PCM TC=75 150 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.66 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VC

 9.3. Size:193K  inchange semiconductor
3dd167e.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.4. Size:193K  inchange semiconductor
3dd167d.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.5. Size:193K  inchange semiconductor
3dd167f.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.6. Size:232K  inchange semiconductor
3dd164f.pdf

3DD162
3DD162

isc Silicon NPN Power Transistor 3DD164FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 9.7. Size:193K  inchange semiconductor
3dd167c.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.8. Size:193K  inchange semiconductor
3dd167a.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

 9.9. Size:193K  inchange semiconductor
3dd167b.pdf

3DD162
3DD162

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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