3DD3055 Todos los transistores

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 3dd3055.pdf

3DD3055(2N3055) NPN A B C D E F PCM TC=25 100 W ICM 15 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V

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 3dd3040a3.pdf

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 3dd3015a1.pdf

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W

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 3dd3015 a3.pdf

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 3dd3015 a1.pdf

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W

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 3dd3040 a1.pdf

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 3dd3015a3.pdf

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 3dd3040a4.pdf

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 3dd3040a6.pdf

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 3dd3020a4.pdf

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 3dd3020 a6.pdf

NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W

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 3dd3040a7.pdf

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 3dd3040 a6.pdf

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 3dd3040a1.pdf

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 3dd3040 a7.pdf

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 3dd3020a6.pdf

NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W

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 3dd3020a3.pdf

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 3dd3020 a3.pdf

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 3dd3040a3.pdf

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 3dd303a.pdf

isc Silicon NPN Power Transistor 3DD303A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 9.21. Size:201K  inchange semiconductor
 3dd301d.pdf

isc Silicon NPN Power Transistor 3DD301D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

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 3dd303b.pdf

isc Silicon NPN Power Transistor 3DD303B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 9.23. Size:201K  inchange semiconductor
 3dd301c.pdf

isc Silicon NPN Power Transistor 3DD301C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 9.24. Size:202K  inchange semiconductor
 3dd301b.pdf

isc Silicon NPN Power Transistor 3DD301B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 9.25. Size:206K  inchange semiconductor
 3dd303c.pdf

isc Silicon NPN Power Transistor 3DD303C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL