3DD3055 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 3DD3055 Даташит. Аналоги

   Наименование производителя: 3DD3055
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 100 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO276AB TO220 TO257

Аналог (замена) для 3DD3055

- подбор ⓘ биполярного транзистора по параметрам

3DD3055 Datasheet (PDF)

..1. Size:151K china
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3DD3055(2N3055) NPN A B C D E F PCM TC=25 100 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V

9.1. Size:143K crhj
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NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30

9.2. Size:144K crhj
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NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30

9.3. Size:178K crhj
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NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W

9.4. Size:146K crhj
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NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W

9.5. Size:178K crhj
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NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W

9.6. Size:178K crhj
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NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W

9.7. Size:146K crhj
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NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W

9.8. Size:160K crhj
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NPN R 3DD3040 A4 3DD3040 A4 NPN VCEO 450 V IC 2 A Ptot W TC=25 30

9.9. Size:149K crhj
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NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

9.10. Size:160K crhj
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NPN R 3DD3020 A4 3DD3020 A4 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W

9.11. Size:150K crhj
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NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W

9.12. Size:145K crhj
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NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

9.13. Size:149K crhj
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NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

9.14. Size:178K crhj
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NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W

9.15. Size:146K crhj
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NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

9.16. Size:150K crhj
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NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W

9.17. Size:147K crhj
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NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W

9.18. Size:147K crhj
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NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W

9.19. Size:167K wuxi china
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RNPN 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot TC=25 30 W

9.20. Size:200K inchange semiconductor
3dd303a.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD303ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

9.21. Size:201K inchange semiconductor
3dd301d.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD301DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

9.22. Size:201K inchange semiconductor
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isc Silicon NPN Power Transistor 3DD303BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

9.23. Size:201K inchange semiconductor
3dd301c.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD301CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

9.24. Size:202K inchange semiconductor
3dd301b.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD301BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

9.25. Size:206K inchange semiconductor
3dd303c.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD303CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Другие транзисторы... 3DD3020A3 , 3DD3020A4 , 3DD3020A6 , 3DD3040A1 , 3DD3040A3 , 3DD3040A4 , 3DD3040A6 , 3DD3040A7 , D880 , 3DD31 , 3DD3145A6 , 3DD3145A8 , 3DD3150A , 3DD3150A8 , 3DD31A , 3DD31B , 3DD31C .