3DD3055. Аналоги и основные параметры
Наименование производителя: 3DD3055
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO276AB
TO220
TO257
Аналоги (замена) для 3DD3055
- подборⓘ биполярного транзистора по параметрам
3DD3055 даташит
..1. Size:151K china
3dd3055.pdf 
3DD3055(2N3055) NPN A B C D E F PCM TC=25 100 W ICM 15 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V
9.3. Size:178K crhj
3dd3015a1.pdf 
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
9.5. Size:178K crhj
3dd3015 a1.pdf 
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
9.11. Size:150K crhj
3dd3020 a6.pdf 
NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.16. Size:150K crhj
3dd3020a6.pdf 
NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.20. Size:200K inchange semiconductor
3dd303a.pdf 
isc Silicon NPN Power Transistor 3DD303A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
9.21. Size:201K inchange semiconductor
3dd301d.pdf 
isc Silicon NPN Power Transistor 3DD301D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
9.22. Size:201K inchange semiconductor
3dd303b.pdf 
isc Silicon NPN Power Transistor 3DD303B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
9.23. Size:201K inchange semiconductor
3dd301c.pdf 
isc Silicon NPN Power Transistor 3DD301C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
9.24. Size:202K inchange semiconductor
3dd301b.pdf 
isc Silicon NPN Power Transistor 3DD301B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
9.25. Size:206K inchange semiconductor
3dd303c.pdf 
isc Silicon NPN Power Transistor 3DD303C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
Другие транзисторы: 3DD3020A3, 3DD3020A4, 3DD3020A6, 3DD3040A1, 3DD3040A3, 3DD3040A4, 3DD3040A6, 3DD3040A7, 2N4401, 3DD31, 3DD3145A6, 3DD3145A8, 3DD3150A, 3DD3150A8, 3DD31A, 3DD31B, 3DD31C
