All Transistors. 3DD3055 Datasheet

 

3DD3055 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DD3055
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO276AB TO220 TO257

 3DD3055 Transistor Equivalent Substitute - Cross-Reference Search

   

3DD3055 Datasheet (PDF)

 ..1. Size:151K  china
3dd3055.pdf

3DD3055

3DD3055(2N3055) NPN A B C D E F PCM TC=25 100 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V

 9.1. Size:143K  crhj
3dd3040a3.pdf

3DD3055
3DD3055

NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30

 9.2. Size:144K  crhj
3dd3040 a3.pdf

3DD3055
3DD3055

NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30

 9.3. Size:178K  crhj
3dd3015a1.pdf

3DD3055
3DD3055

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W

 9.4. Size:146K  crhj
3dd3015 a3.pdf

3DD3055
3DD3055

NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W

 9.5. Size:178K  crhj
3dd3015 a1.pdf

3DD3055
3DD3055

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W

 9.6. Size:178K  crhj
3dd3040 a1.pdf

3DD3055
3DD3055

NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W

 9.7. Size:146K  crhj
3dd3015a3.pdf

3DD3055
3DD3055

NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W

 9.8. Size:160K  crhj
3dd3040a4.pdf

3DD3055
3DD3055

NPN R 3DD3040 A4 3DD3040 A4 NPN VCEO 450 V IC 2 A Ptot W TC=25 30

 9.9. Size:149K  crhj
3dd3040a6.pdf

3DD3055
3DD3055

NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

 9.10. Size:160K  crhj
3dd3020a4.pdf

3DD3055
3DD3055

NPN R 3DD3020 A4 3DD3020 A4 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W

 9.11. Size:150K  crhj
3dd3020 a6.pdf

3DD3055
3DD3055

NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W

 9.12. Size:145K  crhj
3dd3040a7.pdf

3DD3055
3DD3055

NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

 9.13. Size:149K  crhj
3dd3040 a6.pdf

3DD3055
3DD3055

NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

 9.14. Size:178K  crhj
3dd3040a1.pdf

3DD3055
3DD3055

NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W

 9.15. Size:146K  crhj
3dd3040 a7.pdf

3DD3055
3DD3055

NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

 9.16. Size:150K  crhj
3dd3020a6.pdf

3DD3055
3DD3055

NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W

 9.17. Size:147K  crhj
3dd3020a3.pdf

3DD3055
3DD3055

NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W

 9.18. Size:147K  crhj
3dd3020 a3.pdf

3DD3055
3DD3055

NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W

 9.19. Size:167K  wuxi china
3dd3040a3.pdf

3DD3055
3DD3055

RNPN 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot TC=25 30 W

 9.20. Size:200K  inchange semiconductor
3dd303a.pdf

3DD3055
3DD3055

isc Silicon NPN Power Transistor 3DD303ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.21. Size:201K  inchange semiconductor
3dd301d.pdf

3DD3055
3DD3055

isc Silicon NPN Power Transistor 3DD301DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.22. Size:201K  inchange semiconductor
3dd303b.pdf

3DD3055
3DD3055

isc Silicon NPN Power Transistor 3DD303BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 9.23. Size:201K  inchange semiconductor
3dd301c.pdf

3DD3055
3DD3055

isc Silicon NPN Power Transistor 3DD301CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.24. Size:202K  inchange semiconductor
3dd301b.pdf

3DD3055
3DD3055

isc Silicon NPN Power Transistor 3DD301BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.25. Size:206K  inchange semiconductor
3dd303c.pdf

3DD3055
3DD3055

isc Silicon NPN Power Transistor 3DD303CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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