3DD3150A8
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD3150A8
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 1100
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 9
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO220AB
Búsqueda de reemplazo de transistor bipolar 3DD3150A8
3DD3150A8
Datasheet (PDF)
..1. Size:153K crhj
3dd3150a8.pdf 
NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40
6.1. Size:346K lzg
3dd3150a.pdf
2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V
7.1. Size:153K crhj
3dd3150 a8.pdf
NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40
9.1. Size:151K crhj
3dd3145 a6.pdf
NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot TC=25 50 W
9.2. Size:153K crhj
3dd3145 a8.pdf
NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60
9.3. Size:148K crhj
3dd3145a6.pdf
NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot W TC=25 50
9.4. Size:152K crhj
3dd3145a8.pdf
NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60
9.5. Size:103K china
3dd31ct4.pdf
LJ2015-463DD31CT4 NPN P T =25 1 Wtot AI 3 ACI 5 ACMT 150 jmT -55~150 stgV I =1mA 100 V(BR)CBO CBV I =1mA 100 V(BR)CEO CEV I =1mA 5.0 V(BR)EBO EBI V =60V 50 ACEO CBI V =5V 0.1 mAEBO CEI =3ACV 1.2 VC
9.6. Size:138K lzg
3dd31a.pdf
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.
9.7. Size:138K lzg
3dd31.pdf
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.
9.8. Size:358K lzg
3dd313.pdf
2SD313(3DD313) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 60 V CEO V 5.0 V EBO I 3.0 A C I 8.0 A CPP (T =25) 1.75 W C a P (T =25) 30 W C CT 150
9.9. Size:138K lzg
3dd31b.pdf
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.
9.10. Size:138K lzg
3dd31c.pdf
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.
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